Dielectric properties of barium strontium titanate (BST)/yttrium aluminate (YAlO3) thick films under DC bias field

Bo Su; Timothy Button; T Price; D Iddles; D Cannell

doi:10.1007/s10853-007-2216-3

Dielectric properties of barium strontium titanate (BST)/yttrium aluminate (YAlO3) thick films under DC bias field

Bo Su, Timothy Button, T Price, D Iddles, D Cannell

Metallurgy and Materials

Research output: Contribution to journal › Article

12 Citations (Scopus)

Abstract

The DC bias dependence of the dielectric properties of BST thick films on YAlO3 substrates has been investigated for possible tunable microwave device applications. Rare earth aluminate (e.g. YAlO3) substrates were used to overcome the interfacial interactions between BST thick films and alumina substrates during high temperature sintering. The results show that the BST films exhibit good chemical compatibility with YAlO3 substrates at sintering temperatures up to 1,500 degrees C. Improved density and enhanced grain growth in the films have been obtained compared to BST films on alumina substrates sintered at lower temperatures (

Original language	English
Pages (from-to)	847-851
Number of pages	5
Journal	Journal of Materials Science
Volume	43
Issue number	3
DOIs	https://doi.org/10.1007/s10853-007-2216-3
Publication status	Published - 1 Jan 2008

Access to Document

10.1007/s10853-007-2216-3

Cite this

@article{cbc06b3bba8746e1bf3c4da87efd8ad6,

title = "Dielectric properties of barium strontium titanate (BST)/yttrium aluminate (YAlO3) thick films under DC bias field",

abstract = "The DC bias dependence of the dielectric properties of BST thick films on YAlO3 substrates has been investigated for possible tunable microwave device applications. Rare earth aluminate (e.g. YAlO3) substrates were used to overcome the interfacial interactions between BST thick films and alumina substrates during high temperature sintering. The results show that the BST films exhibit good chemical compatibility with YAlO3 substrates at sintering temperatures up to 1,500 degrees C. Improved density and enhanced grain growth in the films have been obtained compared to BST films on alumina substrates sintered at lower temperatures (",

author = "Bo Su and Timothy Button and T Price and D Iddles and D Cannell",

year = "2008",

month = jan,

day = "1",

doi = "10.1007/s10853-007-2216-3",

language = "English",

volume = "43",

pages = "847--851",

journal = "Journal of Materials Science",

issn = "1573-4803",

publisher = "Springer",

number = "3",

}

TY - JOUR

T1 - Dielectric properties of barium strontium titanate (BST)/yttrium aluminate (YAlO3) thick films under DC bias field

AU - Su, Bo

AU - Button, Timothy

AU - Price, T

AU - Iddles, D

AU - Cannell, D

PY - 2008/1/1

Y1 - 2008/1/1

N2 - The DC bias dependence of the dielectric properties of BST thick films on YAlO3 substrates has been investigated for possible tunable microwave device applications. Rare earth aluminate (e.g. YAlO3) substrates were used to overcome the interfacial interactions between BST thick films and alumina substrates during high temperature sintering. The results show that the BST films exhibit good chemical compatibility with YAlO3 substrates at sintering temperatures up to 1,500 degrees C. Improved density and enhanced grain growth in the films have been obtained compared to BST films on alumina substrates sintered at lower temperatures (

AB - The DC bias dependence of the dielectric properties of BST thick films on YAlO3 substrates has been investigated for possible tunable microwave device applications. Rare earth aluminate (e.g. YAlO3) substrates were used to overcome the interfacial interactions between BST thick films and alumina substrates during high temperature sintering. The results show that the BST films exhibit good chemical compatibility with YAlO3 substrates at sintering temperatures up to 1,500 degrees C. Improved density and enhanced grain growth in the films have been obtained compared to BST films on alumina substrates sintered at lower temperatures (

U2 - 10.1007/s10853-007-2216-3

DO - 10.1007/s10853-007-2216-3

M3 - Article

SN - 1573-4803

VL - 43

SP - 847

EP - 851

JO - Journal of Materials Science

JF - Journal of Materials Science

IS - 3

ER -

Dielectric properties of barium strontium titanate (BST)/yttrium aluminate (YAlO3) thick films under DC bias field

Abstract

Access to Document

Fingerprint

Cite this