Diectric relaxation behaviour in Pb(Mn1/3Sb2/3)O3 - Pb(Zr,Ti)O3

Zhigang Zhu, Kyle Jiang, Graham Davies, G Li, Q Yin, S Sheng

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A study of the relaxor behavior of xPb(Mn1/3Sb2/3) O-3 -(1 - x) Pb(Zr0.52Ti0.48) O-3 (PMS - PZT) ( x = 0.05 - 0.15) ceramics is presented. X-ray diffraction (XRD) showed that all samples displayed a single-phase perovskite structure. Two mechanisms might explain the relaxor behavior in xPMS -(1 - x) PZT systems. One is attributed to the inhomogeneous distribution of B sites in the ABO(3) perovskite structure and the other is attributed to the defect relaxation related to oxygen vacancies. The electric conductivity of PMS - PZT ceramics increased with the increase of PMS content, indicating that the concentration of carriers increased with the increase in doping content. Annealing the as-sintered PMS - PZT ceramics under oxygen atmosphere significantly lowered their DC conductivities. This phenomenon was attributed to the reduction of oxygen-vacancy concentration.
Original languageEnglish
Pages (from-to)1249-1254
Number of pages6
JournalSmart Materials and Structures
Volume15
DOIs
Publication statusPublished - 1 Oct 2006

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