Abstract
Thermal micro actuators are fabricated using deep reactive ion etching (DRIE) technique on silicon on insulator (SOI) substrates. The sidewalls of silicon microstructure in micro actuator are used as optical interfaces with the fibers. Line edge roughness (LER) of reflective sidewalls is essential to device performance. A method is presented through analyzing high-resolution top-down scanning electron microscope (SEM) images to characterize sidewall line edge roughness (LER) of Si microstructures in thermal micro actuator, only conventional SEM scanning technique is required.
Original language | English |
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Pages (from-to) | 985-990 |
Number of pages | 6 |
Journal | The International Journal of Applied Electromagnetics and Mechanics |
Volume | 33 |
Issue number | 3-4 |
DOIs | |
Publication status | Published - 1 Jan 2010 |
Keywords
- scanning electron microscope (SEM)
- line edge roughness (LER)
- deep reactive ion etching (DRIE)
- Micro actuator