Broadband terahertz plasmonic response of touching InSb disks

S. M. Hanham; A. I. Fernández-Domínguez; J. H. Teng; S. S. Ang; K. P. Lim; S. F. Yoon; C. Y. Ngo; N. Klein; J. B. Pendry; S. A. Maier

doi:10.1002/adma.201202003

Broadband terahertz plasmonic response of touching InSb disks

S. M. Hanham^*, A. I. Fernández-Domínguez, J. H. Teng, S. S. Ang, K. P. Lim, S. F. Yoon, C. Y. Ngo, N. Klein, J. B. Pendry, S. A. Maier

^*Corresponding author for this work

Electronic, Electrical and Systems Engineering

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

The plasmonic behavior of dimers of touching semiconductor disks is studied experimentally in the difficult-to-realize regime where the disks are only marginally overlapping. Previous theoretical studies have shown that this geometry exhibits a highly efficient broadband response that may be very promising for light harvesting and sensing applications. By taking advantage of the plasmonic character of InSb in the terahertz regime, we experimentally confirm this broadband response and describe the associated strong field enhancement and sub-micrometer field confinement between the disks.

Original language	English
Journal	Advanced Materials
Volume	24
Issue number	35
DOIs	https://doi.org/10.1002/adma.201202003
Publication status	Published - 11 Sept 2012

Keywords

microstructures
semiconducting materials
surface plasmon resonance

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201202003

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title = "Broadband terahertz plasmonic response of touching InSb disks",

abstract = "The plasmonic behavior of dimers of touching semiconductor disks is studied experimentally in the difficult-to-realize regime where the disks are only marginally overlapping. Previous theoretical studies have shown that this geometry exhibits a highly efficient broadband response that may be very promising for light harvesting and sensing applications. By taking advantage of the plasmonic character of InSb in the terahertz regime, we experimentally confirm this broadband response and describe the associated strong field enhancement and sub-micrometer field confinement between the disks.",

keywords = "microstructures, semiconducting materials, surface plasmon resonance",

author = "Hanham, {S. M.} and Fern{\'a}ndez-Dom{\'i}nguez, {A. I.} and Teng, {J. H.} and Ang, {S. S.} and Lim, {K. P.} and Yoon, {S. F.} and Ngo, {C. Y.} and N. Klein and Pendry, {J. B.} and Maier, {S. A.}",

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doi = "10.1002/adma.201202003",

language = "English",

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AU - Hanham, S. M.

AU - Fernández-Domínguez, A. I.

AU - Teng, J. H.

AU - Ang, S. S.

AU - Lim, K. P.

AU - Yoon, S. F.

AU - Ngo, C. Y.

AU - Klein, N.

AU - Pendry, J. B.

AU - Maier, S. A.

PY - 2012/9/11

Y1 - 2012/9/11

N2 - The plasmonic behavior of dimers of touching semiconductor disks is studied experimentally in the difficult-to-realize regime where the disks are only marginally overlapping. Previous theoretical studies have shown that this geometry exhibits a highly efficient broadband response that may be very promising for light harvesting and sensing applications. By taking advantage of the plasmonic character of InSb in the terahertz regime, we experimentally confirm this broadband response and describe the associated strong field enhancement and sub-micrometer field confinement between the disks.

AB - The plasmonic behavior of dimers of touching semiconductor disks is studied experimentally in the difficult-to-realize regime where the disks are only marginally overlapping. Previous theoretical studies have shown that this geometry exhibits a highly efficient broadband response that may be very promising for light harvesting and sensing applications. By taking advantage of the plasmonic character of InSb in the terahertz regime, we experimentally confirm this broadband response and describe the associated strong field enhancement and sub-micrometer field confinement between the disks.

KW - microstructures

KW - semiconducting materials

KW - surface plasmon resonance

UR - http://www.scopus.com/inward/record.url?scp=84865845306&partnerID=8YFLogxK

U2 - 10.1002/adma.201202003

DO - 10.1002/adma.201202003

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AN - SCOPUS:84865845306

SN - 0935-9648

VL - 24

JO - Advanced Materials

JF - Advanced Materials

IS - 35

ER -

Broadband terahertz plasmonic response of touching InSb disks

Abstract

Keywords

ASJC Scopus subject areas

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