BaxSr1 - xTiO3 Thin Films for Tunable Microwave Devices in Cryogenic and Room Temperature Application

P.M. Suherman; T.J. Jackson; F. Huang; M.J. Lancaster; H.T. Su

doi:10.1080/00150190802375383

BaxSr1 - xTiO3 Thin Films for Tunable Microwave Devices in Cryogenic and Room Temperature Application

P.M. Suherman, T.J. Jackson, F. Huang, M.J. Lancaster, H.T. Su

Electronic, Electrical and Systems Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The microwave properties of YBCO/Ba0.05Sr0.95TiO3 (BST5) and Ag/Ba0.5Sr0.5TiO3 (BST50) films were characterized at 80 K and 290 K. At zero bias, the BST5 had a permittivity of 400 and a loss tangent of 0.02; the BST50 had a permittivity of 900 and a loss tangent of 0.1. The respective tunabilities at 3.6 V m- 1 were 15% and 44%. Analysis of the performance of phase shifters and tunable filters based on these films showed that both conductor and dielectric losses need to be considered in the selection of materials for devices. A high tunability alone does not guarantee good performance.

Original language	English
Pages (from-to)	170-178
Number of pages	9
Journal	Ferroelectrics
Volume	367
Issue number	1 PART 1
DOIs	https://doi.org/10.1080/00150190802375383
Publication status	Published - 1 Jan 2008

Keywords

tunable filter
ferroelectric
BST thin film
phase shifter

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10.1080/00150190802375383

Advanced Microwave Devices for Frequency-Agile Applications
Lancaster, M. & Jackson, T.
Engineering & Physical Science Research Council
28/11/05 → 27/05/09
Project: Research Councils

Cite this

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title = "BaxSr1 - xTiO3 Thin Films for Tunable Microwave Devices in Cryogenic and Room Temperature Application",

abstract = "The microwave properties of YBCO/Ba0.05Sr0.95TiO3 (BST5) and Ag/Ba0.5Sr0.5TiO3 (BST50) films were characterized at 80 K and 290 K. At zero bias, the BST5 had a permittivity of 400 and a loss tangent of 0.02; the BST50 had a permittivity of 900 and a loss tangent of 0.1. The respective tunabilities at 3.6 V m- 1 were 15% and 44%. Analysis of the performance of phase shifters and tunable filters based on these films showed that both conductor and dielectric losses need to be considered in the selection of materials for devices. A high tunability alone does not guarantee good performance.",

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T1 - BaxSr1 - xTiO3 Thin Films for Tunable Microwave Devices in Cryogenic and Room Temperature Application

AU - Suherman, P.M.

AU - Jackson, T.J.

AU - Huang, F.

AU - Lancaster, M.J.

AU - Su, H.T.

PY - 2008/1/1

Y1 - 2008/1/1

N2 - The microwave properties of YBCO/Ba0.05Sr0.95TiO3 (BST5) and Ag/Ba0.5Sr0.5TiO3 (BST50) films were characterized at 80 K and 290 K. At zero bias, the BST5 had a permittivity of 400 and a loss tangent of 0.02; the BST50 had a permittivity of 900 and a loss tangent of 0.1. The respective tunabilities at 3.6 V m- 1 were 15% and 44%. Analysis of the performance of phase shifters and tunable filters based on these films showed that both conductor and dielectric losses need to be considered in the selection of materials for devices. A high tunability alone does not guarantee good performance.

AB - The microwave properties of YBCO/Ba0.05Sr0.95TiO3 (BST5) and Ag/Ba0.5Sr0.5TiO3 (BST50) films were characterized at 80 K and 290 K. At zero bias, the BST5 had a permittivity of 400 and a loss tangent of 0.02; the BST50 had a permittivity of 900 and a loss tangent of 0.1. The respective tunabilities at 3.6 V m- 1 were 15% and 44%. Analysis of the performance of phase shifters and tunable filters based on these films showed that both conductor and dielectric losses need to be considered in the selection of materials for devices. A high tunability alone does not guarantee good performance.

KW - tunable filter

KW - ferroelectric

KW - BST thin film

KW - phase shifter

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U2 - 10.1080/00150190802375383

DO - 10.1080/00150190802375383

M3 - Article

VL - 367

SP - 170

EP - 178

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1 PART 1

ER -

BaxSr1 - xTiO3 Thin Films for Tunable Microwave Devices in Cryogenic and Room Temperature Application

Abstract

Keywords

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Advanced Microwave Devices for Frequency-Agile Applications

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