A method of heat-treatment of near gamma-TiAl to enhance oxidation resistance by the formation of a Ti₅Si₃ layer

Simon Gray; Michael Jacobs; Clive Ponton; W Voice; Hugh Evans

doi:10.1016/j.msea.2004.06.040

A method of heat-treatment of near gamma-TiAl to enhance oxidation resistance by the formation of a Ti₅Si₃ layer

Simon Gray, Michael Jacobs, Clive Ponton, W Voice, Hugh Evans

Metallurgy and Materials

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13 Citations (Scopus)

Abstract

It is shown that the heat-treatment of near gamma-TiAl in a silica capsule under low oxygen partial pressure at 1283 K for 50 h produces a thin (1-2 mum) Ti5Si3 external film on the near gamma-TiAl specimen. This layer confers significant improvements in oxidation resistance for at least 500h in air at 1173 K. The silicide layer is thought to be produced as the result of gaseous transport of SiO from the walls of the silica vessel to the specimen surface and its reaction there. However, the production of SiO requires that particularly low values of oxygen partial pressure develop within the silica capsule. Mechanisms whereby this can be achieved are discussed but the likely process involves the solution of oxygen within the specimen. The outcome is that the heat-treatment procedure represents a cost-effective CVD-type process for enhancing the oxidation resistance of near gamma-TiAl intermetallics. (C) 2004 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	77-82
Number of pages	6
Journal	Materials Science and Engineering A
Volume	384
Issue number	1-2
DOIs	https://doi.org/10.1016/j.msea.2004.06.040
Publication status	Published - 1 Jan 2004

Keywords

CVD treatment
titanium silicide
oxidation resistance
gamma titanium aluminide

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10.1016/j.msea.2004.06.040

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title = "A method of heat-treatment of near gamma-TiAl to enhance oxidation resistance by the formation of a Ti₅Si₃ layer",

abstract = "It is shown that the heat-treatment of near gamma-TiAl in a silica capsule under low oxygen partial pressure at 1283 K for 50 h produces a thin (1-2 mum) Ti5Si3 external film on the near gamma-TiAl specimen. This layer confers significant improvements in oxidation resistance for at least 500h in air at 1173 K. The silicide layer is thought to be produced as the result of gaseous transport of SiO from the walls of the silica vessel to the specimen surface and its reaction there. However, the production of SiO requires that particularly low values of oxygen partial pressure develop within the silica capsule. Mechanisms whereby this can be achieved are discussed but the likely process involves the solution of oxygen within the specimen. The outcome is that the heat-treatment procedure represents a cost-effective CVD-type process for enhancing the oxidation resistance of near gamma-TiAl intermetallics. (C) 2004 Elsevier B.V. All rights reserved.",

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T1 - A method of heat-treatment of near gamma-TiAl to enhance oxidation resistance by the formation of a Ti₅Si₃ layer

AU - Gray, Simon

AU - Jacobs, Michael

AU - Ponton, Clive

AU - Voice, W

AU - Evans, Hugh

PY - 2004/1/1

Y1 - 2004/1/1

N2 - It is shown that the heat-treatment of near gamma-TiAl in a silica capsule under low oxygen partial pressure at 1283 K for 50 h produces a thin (1-2 mum) Ti5Si3 external film on the near gamma-TiAl specimen. This layer confers significant improvements in oxidation resistance for at least 500h in air at 1173 K. The silicide layer is thought to be produced as the result of gaseous transport of SiO from the walls of the silica vessel to the specimen surface and its reaction there. However, the production of SiO requires that particularly low values of oxygen partial pressure develop within the silica capsule. Mechanisms whereby this can be achieved are discussed but the likely process involves the solution of oxygen within the specimen. The outcome is that the heat-treatment procedure represents a cost-effective CVD-type process for enhancing the oxidation resistance of near gamma-TiAl intermetallics. (C) 2004 Elsevier B.V. All rights reserved.

AB - It is shown that the heat-treatment of near gamma-TiAl in a silica capsule under low oxygen partial pressure at 1283 K for 50 h produces a thin (1-2 mum) Ti5Si3 external film on the near gamma-TiAl specimen. This layer confers significant improvements in oxidation resistance for at least 500h in air at 1173 K. The silicide layer is thought to be produced as the result of gaseous transport of SiO from the walls of the silica vessel to the specimen surface and its reaction there. However, the production of SiO requires that particularly low values of oxygen partial pressure develop within the silica capsule. Mechanisms whereby this can be achieved are discussed but the likely process involves the solution of oxygen within the specimen. The outcome is that the heat-treatment procedure represents a cost-effective CVD-type process for enhancing the oxidation resistance of near gamma-TiAl intermetallics. (C) 2004 Elsevier B.V. All rights reserved.

KW - CVD treatment

KW - titanium silicide

KW - oxidation resistance

KW - gamma titanium aluminide

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DO - 10.1016/j.msea.2004.06.040

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JO - Materials Science and Engineering A

JF - Materials Science and Engineering A

IS - 1-2

ER -

A method of heat-treatment of near gamma-TiAl to enhance oxidation resistance by the formation of a Ti₅Si₃ layer

Abstract

Keywords

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