A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist

Research output: Contribution to journalArticle


Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20-nm line widths are patterned.


Original languageEnglish
Pages (from-to)2076
Number of pages1
Issue number12
Publication statusPublished - 3 Dec 2007


  • fullerenes, lithography, electron beams, resists, chemical amplification