A 135-150-GHz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides

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A 135-150-GHz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides. / Guo, Cheng; Huggard, Peter G.; Dhayalan, Yuvaraj; Shang, Xiaobang; Powell, Jeffrey; Lancaster, Michael J.; Xu, Jun; Wang, Yi; Wang, Hui; Alderman, Byron.

In: IEEE Transactions on Microwave Theory and Techniques, 27.12.2019, p. 1-10.

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@article{23b72b24f23d4337ba604141bb7bed9c,
title = "A 135-150-GHz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides",
abstract = "This article presents a 135-150-GHz Schottky diode-based bias-less frequency tripler based on SU-8 micromachined WR-5 waveguides. The waveguides consist of five 432-μm-thick silver-plated SU-8 layers, which house the diode chip and form the output matching network. The input matching circuit is realized in a computer numerical control (CNC) milled waveguide filter, which also provides support and thermal sink to the SU-8 waveguides. Considering the low thermal conductivity of the SU-8 material, auxiliary metallic thermal paths are designed, and the impact of these is discussed through thermal modeling. The thermal simulations show that under 50-mW power dissipation in the diode anodes, the maximum temperature of the SU-8 tripler is predicted to be 346 K at the diode junction, only 7 K higher than in an entirely metal equivalent. The tripler was measured to have a conversion loss of 16-18 dB and the input return loss is better than 18 dB. This work demonstrates that SU-8 micromachined waveguides can be used to package high-frequency semiconductor components, which, like other photolithography-based processes such as silicon deep reactive ion etching (Si-DRIE), has the potential for submicrometer feature resolution.",
author = "Cheng Guo and Huggard, {Peter G.} and Yuvaraj Dhayalan and Xiaobang Shang and Jeffrey Powell and Lancaster, {Michael J.} and Jun Xu and Yi Wang and Hui Wang and Byron Alderman",
year = "2019",
month = dec,
day = "27",
doi = "10.1109/TMTT.2019.2955684",
language = "English",
pages = "1--10",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "IEEE Xplore",

}

RIS

TY - JOUR

T1 - A 135-150-GHz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides

AU - Guo, Cheng

AU - Huggard, Peter G.

AU - Dhayalan, Yuvaraj

AU - Shang, Xiaobang

AU - Powell, Jeffrey

AU - Lancaster, Michael J.

AU - Xu, Jun

AU - Wang, Yi

AU - Wang, Hui

AU - Alderman, Byron

PY - 2019/12/27

Y1 - 2019/12/27

N2 - This article presents a 135-150-GHz Schottky diode-based bias-less frequency tripler based on SU-8 micromachined WR-5 waveguides. The waveguides consist of five 432-μm-thick silver-plated SU-8 layers, which house the diode chip and form the output matching network. The input matching circuit is realized in a computer numerical control (CNC) milled waveguide filter, which also provides support and thermal sink to the SU-8 waveguides. Considering the low thermal conductivity of the SU-8 material, auxiliary metallic thermal paths are designed, and the impact of these is discussed through thermal modeling. The thermal simulations show that under 50-mW power dissipation in the diode anodes, the maximum temperature of the SU-8 tripler is predicted to be 346 K at the diode junction, only 7 K higher than in an entirely metal equivalent. The tripler was measured to have a conversion loss of 16-18 dB and the input return loss is better than 18 dB. This work demonstrates that SU-8 micromachined waveguides can be used to package high-frequency semiconductor components, which, like other photolithography-based processes such as silicon deep reactive ion etching (Si-DRIE), has the potential for submicrometer feature resolution.

AB - This article presents a 135-150-GHz Schottky diode-based bias-less frequency tripler based on SU-8 micromachined WR-5 waveguides. The waveguides consist of five 432-μm-thick silver-plated SU-8 layers, which house the diode chip and form the output matching network. The input matching circuit is realized in a computer numerical control (CNC) milled waveguide filter, which also provides support and thermal sink to the SU-8 waveguides. Considering the low thermal conductivity of the SU-8 material, auxiliary metallic thermal paths are designed, and the impact of these is discussed through thermal modeling. The thermal simulations show that under 50-mW power dissipation in the diode anodes, the maximum temperature of the SU-8 tripler is predicted to be 346 K at the diode junction, only 7 K higher than in an entirely metal equivalent. The tripler was measured to have a conversion loss of 16-18 dB and the input return loss is better than 18 dB. This work demonstrates that SU-8 micromachined waveguides can be used to package high-frequency semiconductor components, which, like other photolithography-based processes such as silicon deep reactive ion etching (Si-DRIE), has the potential for submicrometer feature resolution.

U2 - 10.1109/TMTT.2019.2955684

DO - 10.1109/TMTT.2019.2955684

M3 - Article

SP - 1

EP - 10

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

ER -