3D printed micro-jet impingement cooling for thermal management of ultra-high power GaN transistors

Research output: Contribution to journalArticlepeer-review

Authors

Colleges, School and Institutes

External organisations

  • University of Bristol

Abstract

Future GaN based radio frequency (RF) high-electron-mobility-transistors (HEMTs) can enable increased areal power dissipation by, for example, integrating GaN device layers with high thermal conductivity diamond substrates. To maximise the benefit of the ultra-high power density electronic devices, improved package level cooling methods are needed to prevent the package and heatsink becoming a thermal bottleneck. We demonstrate that 3D printed polymeric micro-jet liquid impingement cooling can reduce the thermal resistance at the package level by ~ 60 % with respect to GaN RF HEMTs mounted on a conventional packaging.

Bibliographic note

Publisher Copyright: IEEE

Details

Original languageEnglish
JournalIEEE Transactions on Components, Packaging and Manufacturing Technology
Publication statusE-pub ahead of print - 13 Apr 2021

Keywords

  • 3D print, Cooling, Diamond, Gallium nitride, GaN, Heat transfer, Heating systems, micro-jet impingent cooling, Three-dimensional displays, transistor, Transistors