TY - JOUR
T1 - 10 nm scale electron beam lithography using a triphenylene derivative as a negative/positive tone resist
AU - Robinson, A.P.G.
AU - Palmer, R.E.
AU - Tada, T.
AU - Kanayama, T.
AU - Allen, M.T.
AU - Preece, J.A.
AU - Harris, K.D.M.
PY - 1999
Y1 - 1999
N2 - We show that the liquid crystal triphenylene derivative 2,3,6,7,10,11-hexapentyl-oxytriphenylene acts as a high-resolution electron beam resist. Using pentanol as a developer, positive behaviour was observed for electron doses greater than ~300µC cm-2 at 20 keV. At higher doses (>2.5 mC cm-2), the resist rapidly assumes negative tone behaviour. With the developer monochlorobenzene, only negative behaviour was observed, with a sensitivity of ~2.5 mC cm-2 at 20 keV. The resist allows relatively facile definition of 14 nm patterns (negative tone) with a 30 keV electron beam and without the need for any complex pre-irradiation preparation or post-irradiation processing of the resist.
AB - We show that the liquid crystal triphenylene derivative 2,3,6,7,10,11-hexapentyl-oxytriphenylene acts as a high-resolution electron beam resist. Using pentanol as a developer, positive behaviour was observed for electron doses greater than ~300µC cm-2 at 20 keV. At higher doses (>2.5 mC cm-2), the resist rapidly assumes negative tone behaviour. With the developer monochlorobenzene, only negative behaviour was observed, with a sensitivity of ~2.5 mC cm-2 at 20 keV. The resist allows relatively facile definition of 14 nm patterns (negative tone) with a 30 keV electron beam and without the need for any complex pre-irradiation preparation or post-irradiation processing of the resist.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0032593304&partnerID=MN8TOARS
U2 - 10.1088/0022-3727/32/16/102
DO - 10.1088/0022-3727/32/16/102
M3 - Article
SN - 0022-3727
VL - 32
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
ER -