Very low field electron emission from hot filament CVD grown microcrystalline diamond

B. S. Satyanarayana; X. L. Peng; G. Adamopoulos; J. Robertson; W. I. Milne; T. W. Clyne

doi:10.1557/proc-621-q5.3.1

Very low field electron emission from hot filament CVD grown microcrystalline diamond

B. S. Satyanarayana, X. L. Peng, G. Adamopoulos, J. Robertson, W. I. Milne, T. W. Clyne

Research output: Contribution to journal › Article › peer-review

Abstract

Very low threshold field emission from undoped microcrystalline diamond films grown by the hot filament chemical vapour deposition process (HFCVD) is reported. The effect of crystal size, methane concentration and the temperature has been studied. The microcrystalline diamond films grown using 3% methane (CH₄) / hydrogen (H₂) gas mixture ratio under varying deposition temperatures exhibit very low emission threshold fields. The threshold fields varied from 0.4 V/μm to 1 V/μm for an emission current density of 1 μA/cm². A correlation between the emission characteristics and the material properties is presented. These films exhibit an emission site density of ∼10⁴-10⁵/cm² at an applied field of 3 V/μm.

Original language	English
Pages (from-to)	Q531-Q537
Journal	Materials Research Society Symposium-Proceedings
Volume	621
DOIs	https://doi.org/10.1557/proc-621-q5.3.1
Publication status	Published - 2000
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-621-q5.3.1

Cite this

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title = "Very low field electron emission from hot filament CVD grown microcrystalline diamond",

abstract = "Very low threshold field emission from undoped microcrystalline diamond films grown by the hot filament chemical vapour deposition process (HFCVD) is reported. The effect of crystal size, methane concentration and the temperature has been studied. The microcrystalline diamond films grown using 3% methane (CH4) / hydrogen (H2) gas mixture ratio under varying deposition temperatures exhibit very low emission threshold fields. The threshold fields varied from 0.4 V/μm to 1 V/μm for an emission current density of 1 μA/cm2. A correlation between the emission characteristics and the material properties is presented. These films exhibit an emission site density of ∼104-105/cm2 at an applied field of 3 V/μm.",

author = "Satyanarayana, {B. S.} and Peng, {X. L.} and G. Adamopoulos and J. Robertson and Milne, {W. I.} and Clyne, {T. W.}",

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doi = "10.1557/proc-621-q5.3.1",

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journal = "Materials Research Society Symposium-Proceedings",

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T1 - Very low field electron emission from hot filament CVD grown microcrystalline diamond

AU - Satyanarayana, B. S.

AU - Peng, X. L.

AU - Adamopoulos, G.

AU - Robertson, J.

AU - Milne, W. I.

AU - Clyne, T. W.

PY - 2000

Y1 - 2000

N2 - Very low threshold field emission from undoped microcrystalline diamond films grown by the hot filament chemical vapour deposition process (HFCVD) is reported. The effect of crystal size, methane concentration and the temperature has been studied. The microcrystalline diamond films grown using 3% methane (CH4) / hydrogen (H2) gas mixture ratio under varying deposition temperatures exhibit very low emission threshold fields. The threshold fields varied from 0.4 V/μm to 1 V/μm for an emission current density of 1 μA/cm2. A correlation between the emission characteristics and the material properties is presented. These films exhibit an emission site density of ∼104-105/cm2 at an applied field of 3 V/μm.

AB - Very low threshold field emission from undoped microcrystalline diamond films grown by the hot filament chemical vapour deposition process (HFCVD) is reported. The effect of crystal size, methane concentration and the temperature has been studied. The microcrystalline diamond films grown using 3% methane (CH4) / hydrogen (H2) gas mixture ratio under varying deposition temperatures exhibit very low emission threshold fields. The threshold fields varied from 0.4 V/μm to 1 V/μm for an emission current density of 1 μA/cm2. A correlation between the emission characteristics and the material properties is presented. These films exhibit an emission site density of ∼104-105/cm2 at an applied field of 3 V/μm.

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