Monomer 2-furaldehyde (FDH) was deposited onto the glass substrates in optimum conditions via a glow discharge using a capacitively coupled parallel plate reactor to obtain plasma polymerized 2-furaldehyde (PPFDH) thin films of different thicknesses. In order to realize the carrier conduction mechanisms, the direct current density against applied voltage (J-V) characteristics of these films with different thicknesses were investigated at different temperatures (T) in the voltage region from 0.5 to 49 V in Al/PPFDH/Al sandwich configuration. The J-V characteristics at various temperatures follow a power law of the form J ∞ Vn. In the low voltage region the values of n were recorded to be 0.80 ≤ n ≤ 1.12 and those in the high voltage region found to lie between 1.91 ≤ n ≤ 2.58, demonstrating the Ohmic conduction mechanism in the low voltage region and non-Ohmic conduction in the high voltage region. Theoretically calculated and experimental results of Schottky (βs) and Poole-Frenkel (βPF) coefficients display that the most probable conduction mechanism in PPFDH thin films is the Schottky type. Arrhenius plots of J vs. 1/T for an applied voltage of 5 V, the activation energies were 0.13 ± 0.02 and 0.50 ± 0.05 eV in the low and high temperature regions, respectively. However, for an applied voltage of 35 V, the activation energy values were found to be 0.11 ± 0.01 eV and 0.55 ± 0.02 eV, respectively in low and high temperature regions.