Abstract
Impact avalanche transit time (IMPATT) diodes are an important source of radio-frequency power at millimeter and submillimeter wavelengths. However, exploitation of these devices has been restricted, as they are commonly believed to suffer from high noise levels. In this article, we demonstrate that a heterostructure IMPATT diode has the potential for almost noise-free operation. Our analysis is based on a Monte Carlo simulation of oscillating IMPATT devices. (C) 2003 American Institute of Physics.
Original language | English |
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Pages (from-to) | 3897-3900 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1 Jan 2003 |