The influence of nitrogen on dislocation locking in float-zone silicon

J. D. Murphy; A. Giannattasio; C. R. Alpass; S. Senkader; R. J. Falster; P. R. Wilshaw

doi:10.4028/3-908451-13-2.139

The influence of nitrogen on dislocation locking in float-zone silicon

J. D. Murphy^*
, A. Giannattasio
, C. R. Alpass
, S. Senkader
, R. J. Falster
, P. R. Wilshaw

^*Corresponding author for this work

Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Dislocation locking by nitrogen impurities has been investigated in float-zone silicon with nitrogen concentrations of 2.2 × 10 ¹⁵cm^-3 and 3 × 10¹⁴cm^-3. The stress required to unlock dislocations pinned by nitrogen impurities was measured as a function of annealing time (0 to 2500 hours) and temperature (550 to 830°C). For all conditions investigated the locking effect was found to increase linearly with annealing time before saturating. It is assumed that the rate of increase of unlocking stress with annealing time is a measure of transport of nitrogen to the dislocation core. This rate of increase was found to depend linearly on nitrogen concentration, which is consistent with transport by a dimeric species, whose activation energy for diffusion is approximately 1.4eV. The saturation unlocking stress has been found to be dependent on the nitrogen concentration. Additionally, the temperature dependence of the stress required to move dislocations immobilised by nitrogen impurities has been studied. By assuming a value for the binding energy of the nitrogen to the dislocation, the density of the locking species at the dislocation core has been calculated.

Original language	English
Title of host publication	Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting
Publisher	Trans Tech Publications Ltd
Pages	139-144
Number of pages	6
ISBN (Print)	3908451132, 9783908451136
DOIs	https://doi.org/10.4028/3-908451-13-2.139
Publication status	Published - 2005
Event	11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 - Giens, France Duration: 25 Sept 2005 → 30 Sept 2005

Publication series

Name	Solid State Phenomena
Volume	108-109
ISSN (Print)	1012-0394

Conference

Conference	11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005
Country/Territory	France
City	Giens
Period	25/09/05 → 30/09/05

Keywords

Diffusion
Dislocation
Float-zone
Locking
Nitrogen
Silicon
Transport

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
General Materials Science
Condensed Matter Physics

Access to Document

10.4028/3-908451-13-2.139

Cite this

Murphy, J. D., Giannattasio, A., Alpass, C. R., Senkader, S., Falster, R. J., & Wilshaw, P. R. (2005). The influence of nitrogen on dislocation locking in float-zone silicon. In Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting (pp. 139-144). (Solid State Phenomena; Vol. 108-109). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908451-13-2.139

@inproceedings{b94c8035fd364a39980f80e76d157dfc,

title = "The influence of nitrogen on dislocation locking in float-zone silicon",

abstract = "Dislocation locking by nitrogen impurities has been investigated in float-zone silicon with nitrogen concentrations of 2.2 × 10 15cm-3 and 3 × 1014cm-3. The stress required to unlock dislocations pinned by nitrogen impurities was measured as a function of annealing time (0 to 2500 hours) and temperature (550 to 830°C). For all conditions investigated the locking effect was found to increase linearly with annealing time before saturating. It is assumed that the rate of increase of unlocking stress with annealing time is a measure of transport of nitrogen to the dislocation core. This rate of increase was found to depend linearly on nitrogen concentration, which is consistent with transport by a dimeric species, whose activation energy for diffusion is approximately 1.4eV. The saturation unlocking stress has been found to be dependent on the nitrogen concentration. Additionally, the temperature dependence of the stress required to move dislocations immobilised by nitrogen impurities has been studied. By assuming a value for the binding energy of the nitrogen to the dislocation, the density of the locking species at the dislocation core has been calculated.",

keywords = "Diffusion, Dislocation, Float-zone, Locking, Nitrogen, Silicon, Transport",

author = "Murphy, \{J. D.\} and A. Giannattasio and Alpass, \{C. R.\} and S. Senkader and Falster, \{R. J.\} and Wilshaw, \{P. R.\}",

year = "2005",

doi = "10.4028/3-908451-13-2.139",

language = "English",

isbn = "3908451132",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

pages = "139--144",

booktitle = "Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting",

note = "11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 ; Conference date: 25-09-2005 Through 30-09-2005",

}

Murphy, JD, Giannattasio, A, Alpass, CR, Senkader, S, Falster, RJ & Wilshaw, PR 2005, The influence of nitrogen on dislocation locking in float-zone silicon. in Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Solid State Phenomena, vol. 108-109, Trans Tech Publications Ltd, pp. 139-144, 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005, Giens, France, 25/09/05. https://doi.org/10.4028/3-908451-13-2.139

The influence of nitrogen on dislocation locking in float-zone silicon. / Murphy, J. D.; Giannattasio, A.; Alpass, C. R. et al.
Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Trans Tech Publications Ltd, 2005. p. 139-144 (Solid State Phenomena; Vol. 108-109).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - The influence of nitrogen on dislocation locking in float-zone silicon

AU - Murphy, J. D.

AU - Giannattasio, A.

AU - Alpass, C. R.

AU - Senkader, S.

AU - Falster, R. J.

AU - Wilshaw, P. R.

PY - 2005

Y1 - 2005

N2 - Dislocation locking by nitrogen impurities has been investigated in float-zone silicon with nitrogen concentrations of 2.2 × 10 15cm-3 and 3 × 1014cm-3. The stress required to unlock dislocations pinned by nitrogen impurities was measured as a function of annealing time (0 to 2500 hours) and temperature (550 to 830°C). For all conditions investigated the locking effect was found to increase linearly with annealing time before saturating. It is assumed that the rate of increase of unlocking stress with annealing time is a measure of transport of nitrogen to the dislocation core. This rate of increase was found to depend linearly on nitrogen concentration, which is consistent with transport by a dimeric species, whose activation energy for diffusion is approximately 1.4eV. The saturation unlocking stress has been found to be dependent on the nitrogen concentration. Additionally, the temperature dependence of the stress required to move dislocations immobilised by nitrogen impurities has been studied. By assuming a value for the binding energy of the nitrogen to the dislocation, the density of the locking species at the dislocation core has been calculated.

AB - Dislocation locking by nitrogen impurities has been investigated in float-zone silicon with nitrogen concentrations of 2.2 × 10 15cm-3 and 3 × 1014cm-3. The stress required to unlock dislocations pinned by nitrogen impurities was measured as a function of annealing time (0 to 2500 hours) and temperature (550 to 830°C). For all conditions investigated the locking effect was found to increase linearly with annealing time before saturating. It is assumed that the rate of increase of unlocking stress with annealing time is a measure of transport of nitrogen to the dislocation core. This rate of increase was found to depend linearly on nitrogen concentration, which is consistent with transport by a dimeric species, whose activation energy for diffusion is approximately 1.4eV. The saturation unlocking stress has been found to be dependent on the nitrogen concentration. Additionally, the temperature dependence of the stress required to move dislocations immobilised by nitrogen impurities has been studied. By assuming a value for the binding energy of the nitrogen to the dislocation, the density of the locking species at the dislocation core has been calculated.

KW - Diffusion

KW - Dislocation

KW - Float-zone

KW - Locking

KW - Nitrogen

KW - Silicon

KW - Transport

UR - https://www.scopus.com/pages/publications/85088175317

U2 - 10.4028/3-908451-13-2.139

DO - 10.4028/3-908451-13-2.139

M3 - Conference contribution

AN - SCOPUS:85088175317

SN - 3908451132

SN - 9783908451136

T3 - Solid State Phenomena

SP - 139

EP - 144

BT - Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting

PB - Trans Tech Publications Ltd

T2 - 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005

Y2 - 25 September 2005 through 30 September 2005

ER -

Murphy JD, Giannattasio A, Alpass CR, Senkader S, Falster RJ, Wilshaw PR. The influence of nitrogen on dislocation locking in float-zone silicon. In Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Trans Tech Publications Ltd. 2005. p. 139-144. (Solid State Phenomena). doi: 10.4028/3-908451-13-2.139

The influence of nitrogen on dislocation locking in float-zone silicon

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Fingerprint

Cite this