The extended growth of graphene oxide flakes using ethanol CVD

Jingfeng Huang; Melanie Larisika; W H Derrick Fam; Qiyuan He; Myra A Nimmo; Christoph Nowak; I Y Alfred Tok

doi:10.1039/c3nr33704a

The extended growth of graphene oxide flakes using ethanol CVD

Jingfeng Huang, Melanie Larisika, W H Derrick Fam, Qiyuan He, Myra A Nimmo, Christoph Nowak, I Y Alfred Tok

Life and Environmental Sciences

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

We report the extended growth of Graphene Oxide (GO) flakes using atmospheric pressure ethanol Chemical Vapor Deposition (CVD). GO was used to catalyze the deposition of carbon on a substrate in the ethanol CVD with Ar and H2 as carrier gases. Raman, SEM, XPS and AFM characterized the growth to be a reduced GO (RGO) of <5 layers. This newly grown RGO possesses lower defect density with larger and increased distribution of sp(2) domains than chemically reduced RGO. Furthermore this method without optimization reduces the relative standard deviation of electrical conductivity between chips, from 80.5% to 16.5%, enabling RGO to be used in practical electronic devices.

Original language	English
Pages (from-to)	2945-51
Number of pages	7
Journal	Nanoscale
Volume	5
Issue number	7
DOIs	https://doi.org/10.1039/c3nr33704a
Publication status	Published - 7 Apr 2013

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title = "The extended growth of graphene oxide flakes using ethanol CVD",

abstract = "We report the extended growth of Graphene Oxide (GO) flakes using atmospheric pressure ethanol Chemical Vapor Deposition (CVD). GO was used to catalyze the deposition of carbon on a substrate in the ethanol CVD with Ar and H2 as carrier gases. Raman, SEM, XPS and AFM characterized the growth to be a reduced GO (RGO) of <5 layers. This newly grown RGO possesses lower defect density with larger and increased distribution of sp(2) domains than chemically reduced RGO. Furthermore this method without optimization reduces the relative standard deviation of electrical conductivity between chips, from 80.5% to 16.5%, enabling RGO to be used in practical electronic devices.",

author = "Jingfeng Huang and Melanie Larisika and Fam, {W H Derrick} and Qiyuan He and Nimmo, {Myra A} and Christoph Nowak and Tok, {I Y Alfred}",

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AU - Huang, Jingfeng

AU - Larisika, Melanie

AU - Fam, W H Derrick

AU - He, Qiyuan

AU - Nimmo, Myra A

AU - Nowak, Christoph

AU - Tok, I Y Alfred

PY - 2013/4/7

Y1 - 2013/4/7

N2 - We report the extended growth of Graphene Oxide (GO) flakes using atmospheric pressure ethanol Chemical Vapor Deposition (CVD). GO was used to catalyze the deposition of carbon on a substrate in the ethanol CVD with Ar and H2 as carrier gases. Raman, SEM, XPS and AFM characterized the growth to be a reduced GO (RGO) of <5 layers. This newly grown RGO possesses lower defect density with larger and increased distribution of sp(2) domains than chemically reduced RGO. Furthermore this method without optimization reduces the relative standard deviation of electrical conductivity between chips, from 80.5% to 16.5%, enabling RGO to be used in practical electronic devices.

AB - We report the extended growth of Graphene Oxide (GO) flakes using atmospheric pressure ethanol Chemical Vapor Deposition (CVD). GO was used to catalyze the deposition of carbon on a substrate in the ethanol CVD with Ar and H2 as carrier gases. Raman, SEM, XPS and AFM characterized the growth to be a reduced GO (RGO) of <5 layers. This newly grown RGO possesses lower defect density with larger and increased distribution of sp(2) domains than chemically reduced RGO. Furthermore this method without optimization reduces the relative standard deviation of electrical conductivity between chips, from 80.5% to 16.5%, enabling RGO to be used in practical electronic devices.

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DO - 10.1039/c3nr33704a

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SN - 2040-3364

VL - 5

SP - 2945

EP - 2951

JO - Nanoscale

JF - Nanoscale

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ER -

The extended growth of graphene oxide flakes using ethanol CVD

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