TCNQ Physisorption on the Topological Insulator Bi2Se3

Ada Della Pia; Simone Lisi; Oreste De Luca; Daniel A. Warr; J. Lawrence; Mikhail M. Otrokov; Ziya S. Aliev; Evgueni V. Chulkov; Raffaele G. Agostino; Andrés Arnau; Marco Papagno; Giovanni Costantini

doi:10.1002/cphc.201800259

TCNQ Physisorption on the Topological Insulator Bi₂Se₃

Ada Della Pia, Simone Lisi, Oreste De Luca, Daniel A. Warr, J. Lawrence, Mikhail M. Otrokov, Ziya S. Aliev, Evgueni V. Chulkov, Raffaele G. Agostino, Andrés Arnau, Marco Papagno, Giovanni Costantini^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Topological insulators are promising candidates for spintronic applications due to their topologically protected, spin-momentum locked and gapless surface states. The breaking of the time-reversal symmetry after the introduction of magnetic impurities, such as 3d transition metal atoms embedded in two-dimensional molecular networks, could lead to several phenomena interesting for device fabrication. The first step towards the fabrication of metal-organic coordination networks on the surface of a topological insulator is to investigate the adsorption of the pure molecular layer, which is the aim of this study. Here, the effect of the deposition of the electron acceptor 7,7,8,8-tetracyanoquinodimethane (TCNQ) molecules on the surface of a prototypical topological insulator, bismuth selenide (Bi₂Se₃), is investigated. Scanning tunneling microscope images at low-temperature reveal the formation of a highly ordered two-dimensional molecular network. The essentially unperturbed electronic structure of the topological insulator observed by photoemission spectroscopy measurements demonstrates a negligible charge transfer between the molecular layer and the substrate. Density functional theory calculations confirm the picture of a weakly interacting adsorbed molecular layer. These results reveal significant potential of TCNQ for the realization of metal-organic coordination networks on the topological insulator surface.

Original language	English
Pages (from-to)	2405-2410
Number of pages	6
Journal	ChemPhysChem
Volume	19
Issue number	18
DOIs	https://doi.org/10.1002/cphc.201800259
Publication status	Published - 18 Sept 2018

Bibliographical note

Funding Information:
The authors thank P. M. Shverdyaeva and P. Moras for help during the experiments at the VUV end-station and J. Fujii and I. Vobornik at the APE end-station of the ELETTRA synchrotron. A. D. P. was partially funded through an IAS early career fellowship of the University of Warwick. A. D. P., D. W., and G. C. acknowledge financial support from the EU through the ERC Grant “VISUAL-MS” (308115) and from the Royal Society through grant IE150208. The funding by the University of the Basque Country (Grant IT-756-13), the Spanish Ministry of Science and Innovation (Grant FIS2016-75862-P), Tomsk State University competitiveness improvement programme (Project No. 8.1.01.2017), and Saint Petersburg State University (Grant 15.61.202.2015) is also gratefully acknowledged. The calculations were performed in the Donostia International Physics Center and the «Computing Center» of Research park of St. Petersburg State University“ (http://cc.spbu.ru). This work has been partly supported by the Italian Ministry of Education, Universities and Research (MIUR) through project PON03PE_ 00092_1 (EOMAT).

Publisher Copyright:
© 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

Density Functional Theory
Electronic structure
Molecular Adsorption
Photoemission Spectroscopy
Scanning Tunneling Microscopy
Topological Insulators

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Physical and Theoretical Chemistry

Access to Document

10.1002/cphc.201800259

Cite this

@article{0d4d6ee664de419f97ccdf9a6b0fb659,

title = "TCNQ Physisorption on the Topological Insulator Bi2Se3",

abstract = "Topological insulators are promising candidates for spintronic applications due to their topologically protected, spin-momentum locked and gapless surface states. The breaking of the time-reversal symmetry after the introduction of magnetic impurities, such as 3d transition metal atoms embedded in two-dimensional molecular networks, could lead to several phenomena interesting for device fabrication. The first step towards the fabrication of metal-organic coordination networks on the surface of a topological insulator is to investigate the adsorption of the pure molecular layer, which is the aim of this study. Here, the effect of the deposition of the electron acceptor 7,7,8,8-tetracyanoquinodimethane (TCNQ) molecules on the surface of a prototypical topological insulator, bismuth selenide (Bi2Se3), is investigated. Scanning tunneling microscope images at low-temperature reveal the formation of a highly ordered two-dimensional molecular network. The essentially unperturbed electronic structure of the topological insulator observed by photoemission spectroscopy measurements demonstrates a negligible charge transfer between the molecular layer and the substrate. Density functional theory calculations confirm the picture of a weakly interacting adsorbed molecular layer. These results reveal significant potential of TCNQ for the realization of metal-organic coordination networks on the topological insulator surface.",

keywords = "Density Functional Theory, Electronic structure, Molecular Adsorption, Photoemission Spectroscopy, Scanning Tunneling Microscopy, Topological Insulators",

author = "Pia, {Ada Della} and Simone Lisi and Luca, {Oreste De} and Warr, {Daniel A.} and J. Lawrence and Otrokov, {Mikhail M.} and Aliev, {Ziya S.} and Chulkov, {Evgueni V.} and Agostino, {Raffaele G.} and Andr{\'e}s Arnau and Marco Papagno and Giovanni Costantini",

note = "Funding Information: The authors thank P. M. Shverdyaeva and P. Moras for help during the experiments at the VUV end-station and J. Fujii and I. Vobornik at the APE end-station of the ELETTRA synchrotron. A. D. P. was partially funded through an IAS early career fellowship of the University of Warwick. A. D. P., D. W., and G. C. acknowledge financial support from the EU through the ERC Grant “VISUAL-MS” (308115) and from the Royal Society through grant IE150208. The funding by the University of the Basque Country (Grant IT-756-13), the Spanish Ministry of Science and Innovation (Grant FIS2016-75862-P), Tomsk State University competitiveness improvement programme (Project No. 8.1.01.2017), and Saint Petersburg State University (Grant 15.61.202.2015) is also gratefully acknowledged. The calculations were performed in the Donostia International Physics Center and the «Computing Center» of Research park of St. Petersburg State University“ (http://cc.spbu.ru). This work has been partly supported by the Italian Ministry of Education, Universities and Research (MIUR) through project PON03PE_ 00092_1 (EOMAT). Publisher Copyright: {\textcopyright} 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2018",

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doi = "10.1002/cphc.201800259",

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AU - Pia, Ada Della

AU - Lisi, Simone

AU - Luca, Oreste De

AU - Warr, Daniel A.

AU - Lawrence, J.

AU - Otrokov, Mikhail M.

AU - Aliev, Ziya S.

AU - Chulkov, Evgueni V.

AU - Agostino, Raffaele G.

AU - Arnau, Andrés

AU - Papagno, Marco

AU - Costantini, Giovanni

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N2 - Topological insulators are promising candidates for spintronic applications due to their topologically protected, spin-momentum locked and gapless surface states. The breaking of the time-reversal symmetry after the introduction of magnetic impurities, such as 3d transition metal atoms embedded in two-dimensional molecular networks, could lead to several phenomena interesting for device fabrication. The first step towards the fabrication of metal-organic coordination networks on the surface of a topological insulator is to investigate the adsorption of the pure molecular layer, which is the aim of this study. Here, the effect of the deposition of the electron acceptor 7,7,8,8-tetracyanoquinodimethane (TCNQ) molecules on the surface of a prototypical topological insulator, bismuth selenide (Bi2Se3), is investigated. Scanning tunneling microscope images at low-temperature reveal the formation of a highly ordered two-dimensional molecular network. The essentially unperturbed electronic structure of the topological insulator observed by photoemission spectroscopy measurements demonstrates a negligible charge transfer between the molecular layer and the substrate. Density functional theory calculations confirm the picture of a weakly interacting adsorbed molecular layer. These results reveal significant potential of TCNQ for the realization of metal-organic coordination networks on the topological insulator surface.

AB - Topological insulators are promising candidates for spintronic applications due to their topologically protected, spin-momentum locked and gapless surface states. The breaking of the time-reversal symmetry after the introduction of magnetic impurities, such as 3d transition metal atoms embedded in two-dimensional molecular networks, could lead to several phenomena interesting for device fabrication. The first step towards the fabrication of metal-organic coordination networks on the surface of a topological insulator is to investigate the adsorption of the pure molecular layer, which is the aim of this study. Here, the effect of the deposition of the electron acceptor 7,7,8,8-tetracyanoquinodimethane (TCNQ) molecules on the surface of a prototypical topological insulator, bismuth selenide (Bi2Se3), is investigated. Scanning tunneling microscope images at low-temperature reveal the formation of a highly ordered two-dimensional molecular network. The essentially unperturbed electronic structure of the topological insulator observed by photoemission spectroscopy measurements demonstrates a negligible charge transfer between the molecular layer and the substrate. Density functional theory calculations confirm the picture of a weakly interacting adsorbed molecular layer. These results reveal significant potential of TCNQ for the realization of metal-organic coordination networks on the topological insulator surface.

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KW - Electronic structure

KW - Molecular Adsorption

KW - Photoemission Spectroscopy

KW - Scanning Tunneling Microscopy

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