Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks

Li Ting Tseng; Dimitrios Kazazis; Xiaolong Wang; Carmen M. Popescu; Alex P.G. Robinson; Yasin Ekinci

doi:10.1016/j.mee.2019.03.002

Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks

Li Ting Tseng^*, Dimitrios Kazazis, Xiaolong Wang, Carmen M. Popescu, Alex P.G. Robinson, Yasin Ekinci

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We report on a novel and simple pattern transfer process into Si via fullerene-based spin-on-carbon (SOC) hard masks in this work. Electron beam lithography and extreme ultraviolet interference lithography techniques are used to pattern high-resolution and dense lines on a resist/SOC bilayer. The patterns are subsequently transferred by a low-pressure O ₂ plasma etching (SOC) and reactive ion etching process with a gas mixture of SF ₆ and C ₄ F ₈ (Si). Si sidewall trimming can be controlled by modifying the Si etching rate, achieving Si fins with dimension down to 15 nm half-pitch with aspect ratio as high as of 7:1.

Original language	English
Pages (from-to)	8-13
Number of pages	6
Journal	Microelectronic Engineering
Volume	210
DOIs	https://doi.org/10.1016/j.mee.2019.03.002
Publication status	Published - 1 Apr 2019

Bibliographical note

Publisher Copyright:
© 2019 Elsevier B.V.

Keywords

Hard mask
Pattern transfer
Reactive ion etching
Si etching
Spin-on‑carbon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2019.03.002

Cite this

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title = "Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks",

abstract = " We report on a novel and simple pattern transfer process into Si via fullerene-based spin-on-carbon (SOC) hard masks in this work. Electron beam lithography and extreme ultraviolet interference lithography techniques are used to pattern high-resolution and dense lines on a resist/SOC bilayer. The patterns are subsequently transferred by a low-pressure O 2 plasma etching (SOC) and reactive ion etching process with a gas mixture of SF 6 and C 4 F 8 (Si). Si sidewall trimming can be controlled by modifying the Si etching rate, achieving Si fins with dimension down to 15 nm half-pitch with aspect ratio as high as of 7:1.",

keywords = "Hard mask, Pattern transfer, Reactive ion etching, Si etching, Spin-on‑carbon",

author = "Tseng, {Li Ting} and Dimitrios Kazazis and Xiaolong Wang and Popescu, {Carmen M.} and Robinson, {Alex P.G.} and Yasin Ekinci",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

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doi = "10.1016/j.mee.2019.03.002",

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journal = "Microelectronic Engineering",

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T1 - Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks

AU - Tseng, Li Ting

AU - Kazazis, Dimitrios

AU - Wang, Xiaolong

AU - Popescu, Carmen M.

AU - Robinson, Alex P.G.

AU - Ekinci, Yasin

PY - 2019/4/1

Y1 - 2019/4/1

N2 - We report on a novel and simple pattern transfer process into Si via fullerene-based spin-on-carbon (SOC) hard masks in this work. Electron beam lithography and extreme ultraviolet interference lithography techniques are used to pattern high-resolution and dense lines on a resist/SOC bilayer. The patterns are subsequently transferred by a low-pressure O 2 plasma etching (SOC) and reactive ion etching process with a gas mixture of SF 6 and C 4 F 8 (Si). Si sidewall trimming can be controlled by modifying the Si etching rate, achieving Si fins with dimension down to 15 nm half-pitch with aspect ratio as high as of 7:1.

AB - We report on a novel and simple pattern transfer process into Si via fullerene-based spin-on-carbon (SOC) hard masks in this work. Electron beam lithography and extreme ultraviolet interference lithography techniques are used to pattern high-resolution and dense lines on a resist/SOC bilayer. The patterns are subsequently transferred by a low-pressure O 2 plasma etching (SOC) and reactive ion etching process with a gas mixture of SF 6 and C 4 F 8 (Si). Si sidewall trimming can be controlled by modifying the Si etching rate, achieving Si fins with dimension down to 15 nm half-pitch with aspect ratio as high as of 7:1.

KW - Hard mask

KW - Pattern transfer

KW - Reactive ion etching

KW - Si etching

KW - Spin-on‑carbon

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DO - 10.1016/j.mee.2019.03.002

M3 - Article

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SN - 0167-9317

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks