Abstract
Structural transformations of InP(001) surfaces over a wide range of temperature and surface stoichiometry have been investigated. (1 x 1)- and (2 x 1)-reconstructed surfaces are formed under phosphorus-rich conditions, which transform to a (2 x 4)-reconstructed form when annealed in vacuum at above 570 K. A new intermediate (2 x 2)/c(2 x 4) surface structure is identified during the transformation from (2 x 1)to(2 x 4). Both the (2 x 4)and the (2 x 2) forms of reconstruction are proposed to involve a first layer of mixed In-P dimers and a second layer consisting of 50% phosphorus and 50% indium. (C) 2000 Elsevier Science B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 92-100 |
| Number of pages | 9 |
| Journal | Surface Science |
| Volume | 468 |
| Issue number | 1-3 |
| Publication status | Published - 1 Nov 2000 |
Keywords
- indium phosphide
- scanning tunneling microscopy
- surface structure, morphology, roughness, and topography
- single crystal surfaces