Single Step Solution Processed GaAs Thin Films from GaMe3 and tBuAsH2 under Ambient Pressure

Sanjayan Sathasivam; Ranga R. Arnepalli; Davinder S. Bhachu; Yao Lu; John Buckeridge; David O. Scanlon; Bhaskar Kumar; Kaushal K. Singh; Robert J. Visser; Christopher S. Blackman; Claire J. Carmalt

doi:10.1021/acs.jpcc.6b00850

Single Step Solution Processed GaAs Thin Films from GaMe₃ and ^tBuAsH₂ under Ambient Pressure

Sanjayan Sathasivam, Ranga R. Arnepalli, Davinder S. Bhachu, Yao Lu, John Buckeridge, David O. Scanlon, Bhaskar Kumar, Kaushal K. Singh, Robert J. Visser, Christopher S. Blackman, Claire J. Carmalt^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

This article reports on the possibility of low-cost GaAs formed under ambient pressure via a single step solution processed route from only readily available precursors, ^tBuAsH₂ and GaMe₃. The thin films of GaAs on glass substrates were found to have good crystallinity with crystallites as large as 150 nm and low contamination with experimental results matching well with theoretical density of states calculations. These results open up a route to efficient and cost-effective scale up of GaAs thin films with high material properties for widespread industrial use. Confirmation of film quality was determined using XRD, Raman, EDX mapping, SEM, HRTEM, XPS, and SIMS.

Original language	English
Pages (from-to)	7013-7019
Number of pages	7
Journal	Journal of Physical Chemistry C
Volume	120
Issue number	13
DOIs	https://doi.org/10.1021/acs.jpcc.6b00850
Publication status	Published - 21 Apr 2016

Bibliographical note

Funding Information:
C.J.C. and S.S. thank Applied Materials Inc., USA, for funding the project, Dr. Ben Schmiege for useful discussions, Mr. Kevin Reeves for assistance with SEM imaging, and Dr. Ghazel Saheli for XPS depth profiling. J.B. and D.O.S. acknowledge access to the ARCHER supercomputer via membership of the UK's HPC Materials Chemistry Consortium, which is funded by EPSRC grant EP/L000202.

Publisher Copyright:
© 2016 American Chemical Society.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

Access to Document

10.1021/acs.jpcc.6b00850

Cite this

@article{620e8052a0f0494d91854ac0210ddc46,

title = "Single Step Solution Processed GaAs Thin Films from GaMe3 and tBuAsH2 under Ambient Pressure",

abstract = "This article reports on the possibility of low-cost GaAs formed under ambient pressure via a single step solution processed route from only readily available precursors, tBuAsH2 and GaMe3. The thin films of GaAs on glass substrates were found to have good crystallinity with crystallites as large as 150 nm and low contamination with experimental results matching well with theoretical density of states calculations. These results open up a route to efficient and cost-effective scale up of GaAs thin films with high material properties for widespread industrial use. Confirmation of film quality was determined using XRD, Raman, EDX mapping, SEM, HRTEM, XPS, and SIMS.",

author = "Sanjayan Sathasivam and Arnepalli, {Ranga R.} and Bhachu, {Davinder S.} and Yao Lu and John Buckeridge and Scanlon, {David O.} and Bhaskar Kumar and Singh, {Kaushal K.} and Visser, {Robert J.} and Blackman, {Christopher S.} and Carmalt, {Claire J.}",

note = "Funding Information: C.J.C. and S.S. thank Applied Materials Inc., USA, for funding the project, Dr. Ben Schmiege for useful discussions, Mr. Kevin Reeves for assistance with SEM imaging, and Dr. Ghazel Saheli for XPS depth profiling. J.B. and D.O.S. acknowledge access to the ARCHER supercomputer via membership of the UK's HPC Materials Chemistry Consortium, which is funded by EPSRC grant EP/L000202. Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = apr,

day = "21",

doi = "10.1021/acs.jpcc.6b00850",

language = "English",

volume = "120",

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journal = "Journal of Physical Chemistry C",

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T1 - Single Step Solution Processed GaAs Thin Films from GaMe3 and tBuAsH2 under Ambient Pressure

AU - Sathasivam, Sanjayan

AU - Arnepalli, Ranga R.

AU - Bhachu, Davinder S.

AU - Lu, Yao

AU - Buckeridge, John

AU - Scanlon, David O.

AU - Kumar, Bhaskar

AU - Singh, Kaushal K.

AU - Visser, Robert J.

AU - Blackman, Christopher S.

AU - Carmalt, Claire J.

N1 - Funding Information: C.J.C. and S.S. thank Applied Materials Inc., USA, for funding the project, Dr. Ben Schmiege for useful discussions, Mr. Kevin Reeves for assistance with SEM imaging, and Dr. Ghazel Saheli for XPS depth profiling. J.B. and D.O.S. acknowledge access to the ARCHER supercomputer via membership of the UK's HPC Materials Chemistry Consortium, which is funded by EPSRC grant EP/L000202. Publisher Copyright: © 2016 American Chemical Society.

PY - 2016/4/21

Y1 - 2016/4/21

N2 - This article reports on the possibility of low-cost GaAs formed under ambient pressure via a single step solution processed route from only readily available precursors, tBuAsH2 and GaMe3. The thin films of GaAs on glass substrates were found to have good crystallinity with crystallites as large as 150 nm and low contamination with experimental results matching well with theoretical density of states calculations. These results open up a route to efficient and cost-effective scale up of GaAs thin films with high material properties for widespread industrial use. Confirmation of film quality was determined using XRD, Raman, EDX mapping, SEM, HRTEM, XPS, and SIMS.

AB - This article reports on the possibility of low-cost GaAs formed under ambient pressure via a single step solution processed route from only readily available precursors, tBuAsH2 and GaMe3. The thin films of GaAs on glass substrates were found to have good crystallinity with crystallites as large as 150 nm and low contamination with experimental results matching well with theoretical density of states calculations. These results open up a route to efficient and cost-effective scale up of GaAs thin films with high material properties for widespread industrial use. Confirmation of film quality was determined using XRD, Raman, EDX mapping, SEM, HRTEM, XPS, and SIMS.

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