Resistance modulation in Ge2Sb2Te5

Jitendra K. Behera; Wei Jie Wang; Xilin Zhou; Shan Guan; Wu Weikang; Yang A. Shengyuan; Robert E. Simpson

doi:10.1016/j.jmst.2020.03.016

Resistance modulation in Ge₂Sb₂Te₅

Jitendra K. Behera^*, Wei Jie Wang, Xilin Zhou, Shan Guan, Wu Weikang, Yang A. Shengyuan, Robert E. Simpson

^*Corresponding author for this work

Electronic, Electrical and Systems Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Chalcogenide based phase change random access memory (PCRAM) holds great promise for high speed and large data storage applications. This memory is scalable, requires a low switching energy, has a high endurance, has fast switching speed, and is nonvolatile. However, decreasing the switching time whilst increasing the cycle endurance is a key challenge for this technology to replace dynamic random access memory. Here we demonstrate high speed and high endurance ultrafast transient switching in the SET state of a prototypical phase change memory cell. Volatile switching is modeled by electron-phonon and lattice scattering on short timescales and charge carrier excitation on long timescales. This volatile switching in phase change materials enables the design of hybrid memory modulators and ultrafast logic circuits.

Original language	English
Pages (from-to)	171-177
Number of pages	7
Journal	Journal of Materials Science and Technology
Volume	50
DOIs	https://doi.org/10.1016/j.jmst.2020.03.016
Publication status	Published - 1 Aug 2020

Bibliographical note

Funding Information:
The research presented herein was funded by the Singapore Ministry of Education (MOE) with a Tier-2 grant ( MOE2017-T2-1-161 ). JKB is grateful for his PhD presidential graduate fellowship and acknowledges support from the MOE.

Publisher Copyright:
© 2020

Keywords

Charge carrier excitation
Large endurance
Phase change memory
Scattering
Transient resistance
Volatile

ASJC Scopus subject areas

Ceramics and Composites
Mechanics of Materials
Mechanical Engineering
Polymers and Plastics
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.jmst.2020.03.016

Cite this

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title = "Resistance modulation in Ge2Sb2Te5",

abstract = "Chalcogenide based phase change random access memory (PCRAM) holds great promise for high speed and large data storage applications. This memory is scalable, requires a low switching energy, has a high endurance, has fast switching speed, and is nonvolatile. However, decreasing the switching time whilst increasing the cycle endurance is a key challenge for this technology to replace dynamic random access memory. Here we demonstrate high speed and high endurance ultrafast transient switching in the SET state of a prototypical phase change memory cell. Volatile switching is modeled by electron-phonon and lattice scattering on short timescales and charge carrier excitation on long timescales. This volatile switching in phase change materials enables the design of hybrid memory modulators and ultrafast logic circuits.",

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AU - Behera, Jitendra K.

AU - Wang, Wei Jie

AU - Zhou, Xilin

AU - Guan, Shan

AU - Weikang, Wu

AU - Shengyuan, Yang A.

AU - Simpson, Robert E.

N1 - Funding Information: The research presented herein was funded by the Singapore Ministry of Education (MOE) with a Tier-2 grant ( MOE2017-T2-1-161 ). JKB is grateful for his PhD presidential graduate fellowship and acknowledges support from the MOE. Publisher Copyright: © 2020

PY - 2020/8/1

Y1 - 2020/8/1

N2 - Chalcogenide based phase change random access memory (PCRAM) holds great promise for high speed and large data storage applications. This memory is scalable, requires a low switching energy, has a high endurance, has fast switching speed, and is nonvolatile. However, decreasing the switching time whilst increasing the cycle endurance is a key challenge for this technology to replace dynamic random access memory. Here we demonstrate high speed and high endurance ultrafast transient switching in the SET state of a prototypical phase change memory cell. Volatile switching is modeled by electron-phonon and lattice scattering on short timescales and charge carrier excitation on long timescales. This volatile switching in phase change materials enables the design of hybrid memory modulators and ultrafast logic circuits.

AB - Chalcogenide based phase change random access memory (PCRAM) holds great promise for high speed and large data storage applications. This memory is scalable, requires a low switching energy, has a high endurance, has fast switching speed, and is nonvolatile. However, decreasing the switching time whilst increasing the cycle endurance is a key challenge for this technology to replace dynamic random access memory. Here we demonstrate high speed and high endurance ultrafast transient switching in the SET state of a prototypical phase change memory cell. Volatile switching is modeled by electron-phonon and lattice scattering on short timescales and charge carrier excitation on long timescales. This volatile switching in phase change materials enables the design of hybrid memory modulators and ultrafast logic circuits.

KW - Charge carrier excitation

KW - Large endurance

KW - Phase change memory

KW - Scattering

KW - Transient resistance

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