Relaxation motion and possible memory of domain structures in barium titanate ceramics studied by mechanical and dielectric losses

Bo Cheng, M Gabbay, M Maglione, G Fantozzi

    Research output: Contribution to journalArticle

    54 Citations (Scopus)

    Abstract

    The relaxation motion and memory effect of domain structures have been investigated using mechanical and dielectric loss measurements in BaTiO3 ceramics with grains sizes varied from 1 mum to 50 mum. The measurements of mechanical loss, elastic modulus, dielectric loss and permittivity show that each phase transition induces a loss peak and an anomaly in the dielectric constants and elastic modulus, furthermore, a number of relaxation loss peaks due to ferroelectric domains in the samples with large grain have been observed. All the relaxation peaks can be analysed by Arrhenius relationship for a wide range of frequency from 10(-2) to 10(6) Hz. The activation energies of relaxation peaks have been determined as 0.92 eV, 0.68 eV, 0.47 eV, and 0.29 eV for the peaks located in the tetragonal, orthorhombic, and rhombohedral phase, with Arrhenius perfactor in the order of 10(-13) s. Moreover, one relaxation process is insensitive to ferroelectric phase transitions, and it can exist in all the ferroelectric phases. This implies a possible memory effect of ferroelectric domain structures. Such a motion of domain wall is limited in fine-grained materials. Effect of vacuum annealing on the relaxation peak in the tetragonal phase is also studied to clarify the mechanisms of the peak. These relaxation peaks could be explained by the interaction between different domain walls and the diffusion of oxygen vacancy in the domains.
    Original languageEnglish
    Pages (from-to)5-18
    Number of pages14
    JournalJournal of Electroceramics
    Volume10
    Issue number1
    Publication statusPublished - 1 Mar 2003

    Keywords

    • mechanical and dielectric loss
    • oxygen vacancies
    • domain wall
    • BaTiO3

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