Realization and Properties of MgB₂ Metal-Masked Ion Damage Junctions

D-J Kang; NH Peng; R Webb; C Jeynes; JH Yun; SH Moon; B Oh; G Burnell; Edward Tarte; DF Moore; G Blamire

doi:10.1063/1.1519965

Realization and Properties of MgB₂ Metal-Masked Ion Damage Junctions

D-J Kang
, NH Peng
, R Webb
, C Jeynes
, JH Yun
, SH Moon
, B Oh
, G Burnell
, Edward Tarte
, DF Moore
, G Blamire

Electronic, Electrical and Systems Engineering

Research output: Contribution to journal › Article

16 Citations (Scopus)

Original language	English
Pages (from-to)	3600-3601
Number of pages	2
Journal	Applied Physics Letters
Volume	81
Issue number	19
DOIs	https://doi.org/10.1063/1.1519965
Publication status	Published - 1 Jan 2002

Access to Document

10.1063/1.1519965

Cite this

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title = "Realization and Properties of MgB₂ Metal-Masked Ion Damage Junctions",

author = "D-J Kang and NH Peng and R Webb and C Jeynes and JH Yun and SH Moon and B Oh and G Burnell and Edward Tarte and DF Moore and G Blamire",

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AU - Webb, R

AU - Jeynes, C

AU - Yun, JH

AU - Moon, SH

AU - Oh, B

AU - Burnell, G

AU - Tarte, Edward

AU - Moore, DF

AU - Blamire, G

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