Process and Sensitivity Optimisation of the Multi-Trigger Resist

Irresistible Materials (IM) is developing novel resist systems based on the multi-trigger concept, which incorporates a dose dependent quenching-like behaviour. In this study, we present the results that have been obtained using Multi Trigger Resists (MTR) by performing EUV exposures on the ASML NXE EUV scanner at IMEC. The MTR is a negative tone high opacity crosslinking resist incorporating. Pitch 28nm dense patterns can be patterned at a dose of 59mJ/cm², a line width of 12.5nm, and a biased LWR of 3.91nm. These resist formulations have also been used to pattern 20nm diameter pillars on a hexagonal 40nm pitch with a dose of 51mJ/cm², and a CDU of 3.5nm; and also pillars at pitches of 34nm hexagonal with a dose of 80mJ/cm² to achieve 17.5nm diameter pillars. High photospeed approaches, which have patterned p28 lines and p34 hex pillars at sub-30 mJ/cm² doses are also introduced.