Performance of RF MEMS Switches at Low Temperatures

Hieng Su; I LLamas-Garro; Michael Lancaster; Martin Prest; JH Park; JM Kim; CS Baek; YK Kim

doi:10.1049/el:20062551

Performance of RF MEMS Switches at Low Temperatures

Hieng Su, I LLamas-Garro, Michael Lancaster, Martin Prest, JH Park, JM Kim, CS Baek, YK Kim

Electronic, Electrical and Systems Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

255 Downloads (Pure)

Abstract

The actuation voltage of microelectromechanical system (MEMS) metal switches was investigated at temperatures ranging from 10 to 290 K. The investigation shows a 50% increase in the actuation voltage at low temperature. A comparison has been made using a published model and showed similar increment of actuation voltage at low temperature.

Original language	English
Pages (from-to)	1219-1221
Number of pages	3
Journal	Electronics Letters
Volume	42
Issue number	21
DOIs	https://doi.org/10.1049/el:20062551
Publication status	Published - 1 Jan 2006

Access to Document

10.1049/el:20062551

EL.pdf

Cite this

@article{5895d317054a4975a6e0578cae7c6f08,

title = "Performance of RF MEMS Switches at Low Temperatures",

abstract = "The actuation voltage of microelectromechanical system (MEMS) metal switches was investigated at temperatures ranging from 10 to 290 K. The investigation shows a 50% increase in the actuation voltage at low temperature. A comparison has been made using a published model and showed similar increment of actuation voltage at low temperature.",

author = "Hieng Su and I LLamas-Garro and Michael Lancaster and Martin Prest and JH Park and JM Kim and CS Baek and YK Kim",

year = "2006",

month = jan,

day = "1",

doi = "10.1049/el:20062551",

language = "English",

volume = "42",

pages = "1219--1221",

journal = "Electronics Letters",

publisher = "Institution of Engineering and Technology",

number = "21",

}

TY - JOUR

T1 - Performance of RF MEMS Switches at Low Temperatures

AU - Su, Hieng

AU - LLamas-Garro, I

AU - Lancaster, Michael

AU - Prest, Martin

AU - Park, JH

AU - Kim, JM

AU - Baek, CS

AU - Kim, YK

PY - 2006/1/1

Y1 - 2006/1/1

N2 - The actuation voltage of microelectromechanical system (MEMS) metal switches was investigated at temperatures ranging from 10 to 290 K. The investigation shows a 50% increase in the actuation voltage at low temperature. A comparison has been made using a published model and showed similar increment of actuation voltage at low temperature.

AB - The actuation voltage of microelectromechanical system (MEMS) metal switches was investigated at temperatures ranging from 10 to 290 K. The investigation shows a 50% increase in the actuation voltage at low temperature. A comparison has been made using a published model and showed similar increment of actuation voltage at low temperature.

U2 - 10.1049/el:20062551

DO - 10.1049/el:20062551

M3 - Article

VL - 42

SP - 1219

EP - 1221

JO - Electronics Letters

JF - Electronics Letters

IS - 21

ER -

Performance of RF MEMS Switches at Low Temperatures

Abstract

Access to Document

Fingerprint

Cite this