Performance of a high resolution chemically amplified electron beam resist at various beam energies

Richard Palmer; Dongxu Yang; Andreas Frommhold; A. McClelland; J. Roth; M. Rosamond; E.H. Linfield; J.  Osmond; Alexander Robinson

doi:10.1016/j.mee.2016.03.010

Performance of a high resolution chemically amplified electron beam resist at various beam energies

Richard Palmer
, Dongxu Yang
, Andreas Frommhold
, A. McClelland
, J. Roth
, M. Rosamond
, E.H. Linfield
, J. Osmond
, Alexander Robinson

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

233 Downloads (Pure)

Abstract

A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.

Original language	English
Pages (from-to)	97-101
Journal	Microelectronic Engineering
Volume	155
Early online date	5 Mar 2016
DOIs	https://doi.org/10.1016/j.mee.2016.03.010
Publication status	Published - 2 Apr 2016

Keywords

Electron beam lithography
Molecular resist
Chemically amplification
Electron beam energy

Access to Document

10.1016/j.mee.2016.03.010Licence: Creative Commons: Attribution (CC BY)

Yang_et_al_Performance_high_resolution_Microelectronic_EngineeringFinal published version, 1.17 MBLicence: Creative Commons: Attribution (CC BY)

Impact Acceleration Account - UOB 2012
Tickell, A. (Principal Investigator)
Engineering & Physical Science Research Council
1/10/12 → 31/03/17
Project: Research Councils
Materials Program Platform Grant : Nanostructured Surfaces
Palmer, R. (Principal Investigator), Guo, Q. (Co-Investigator), Li, Z. (Co-Investigator), Kaplan, A. (Co-Investigator) & Robinson, A. (Co-Investigator)
Engineering & Physical Science Research Council
1/07/07 → 31/12/11
Project: Research Councils

Cite this

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title = "Performance of a high resolution chemically amplified electron beam resist at various beam energies",

abstract = "A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.",

keywords = "Electron beam lithography, Molecular resist, Chemically amplification, Electron beam energy",

author = "Richard Palmer and Dongxu Yang and Andreas Frommhold and A. McClelland and J. Roth and M. Rosamond and E.H. Linfield and J. Osmond and Alexander Robinson",

year = "2016",

month = apr,

day = "2",

doi = "10.1016/j.mee.2016.03.010",

language = "English",

volume = "155",

pages = "97--101",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

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TY - JOUR

T1 - Performance of a high resolution chemically amplified electron beam resist at various beam energies

AU - Palmer, Richard

AU - Yang, Dongxu

AU - Frommhold, Andreas

AU - McClelland, A.

AU - Roth, J.

AU - Rosamond, M.

AU - Linfield, E.H.

AU - Osmond, J.

AU - Robinson, Alexander

PY - 2016/4/2

Y1 - 2016/4/2

N2 - A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.

AB - A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.

KW - Electron beam lithography

KW - Molecular resist

KW - Chemically amplification

KW - Electron beam energy

U2 - 10.1016/j.mee.2016.03.010

DO - 10.1016/j.mee.2016.03.010

M3 - Article

SN - 0167-9317

VL - 155

SP - 97

EP - 101

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Performance of a high resolution chemically amplified electron beam resist at various beam energies

Abstract

Keywords

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Projects

Impact Acceleration Account - UOB 2012

Materials Program Platform Grant : Nanostructured Surfaces

Cite this