P-channel thin-film transistors based on spray-coated Cu2O films

Pichaya Pattanasattayavong; Stuart Thomas; George Adamopoulos; Martyn A. McLachlan; Thomas D. Anthopoulos

doi:10.1063/1.4803085

P-channel thin-film transistors based on spray-coated Cu₂O films

Pichaya Pattanasattayavong
, Stuart Thomas
, George Adamopoulos
, Martyn A. McLachlan
, Thomas D. Anthopoulos^*

^*Corresponding author for this work

Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Thin films of cuprous oxide (Cu₂O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu₂O films was performed using bottom-gate, bottom-contact transistors based on SiO₂ gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10^-4-10^-3 cm² V^-1 s^-1 with some devices exhibiting values close to 1 × 10^-2 cm² V^-1 s ^-1.

Original language	English
Article number	163505
Journal	Applied Physics Letters
Volume	102
Issue number	16
DOIs	https://doi.org/10.1063/1.4803085
Publication status	Published - 22 Apr 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4803085

Cite this

@article{0aa5bb267aca46ee909ce3dcf6d023f2,

title = "P-channel thin-film transistors based on spray-coated Cu2O films",

abstract = "Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10-4-10-3 cm2 V-1 s-1 with some devices exhibiting values close to 1 × 10-2 cm2 V-1 s -1.",

author = "Pichaya Pattanasattayavong and Stuart Thomas and George Adamopoulos and McLachlan, \{Martyn A.\} and Anthopoulos, \{Thomas D.\}",

year = "2013",

month = apr,

day = "22",

doi = "10.1063/1.4803085",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - P-channel thin-film transistors based on spray-coated Cu2O films

AU - Pattanasattayavong, Pichaya

AU - Thomas, Stuart

AU - Adamopoulos, George

AU - McLachlan, Martyn A.

AU - Anthopoulos, Thomas D.

PY - 2013/4/22

Y1 - 2013/4/22

N2 - Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10-4-10-3 cm2 V-1 s-1 with some devices exhibiting values close to 1 × 10-2 cm2 V-1 s -1.

AB - Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10-4-10-3 cm2 V-1 s-1 with some devices exhibiting values close to 1 × 10-2 cm2 V-1 s -1.

UR - https://www.scopus.com/pages/publications/84876963494

U2 - 10.1063/1.4803085

DO - 10.1063/1.4803085

M3 - Article

AN - SCOPUS:84876963494

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 163505