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We have developed a series of fullerene containing materials for use as organic hard masks. Films with a thickness of up to 250 nm were deposited via spin coating. After a crosslinking bake the films exhibit good thermal stability – in the best case a mass loss of less than 3% at 400 °C is seen. Etch resistance of the different formulations are presented and hig-hresolution patterning is demonstrated. During the transfer into silicon no adverse “wiggling” is observed at high resolution. We attribute this to the low levels of aliphatic hydrogen present in the materials. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
|Title of host publication||Organic hard masks utilizing fullerene derivatives|
|Publication status||Published - 20 Mar 2015|