@inproceedings{748a369a8b40460bacffa5bb1cb0c2e5,
title = "Optimization of fullerene-based negative tone chemically amplified fullerene resist for extreme ultraviolet lithography",
abstract = "While the technological progress of Next Generation Lithography (NGL) steadily continues, further progress is required before successful insertion in high volume manufacturing is possible. A key issue is the development of new resists suitable to achieve higher lithographic resolution with acceptable sensitivity and line edge roughness. Molecular resists have been a primary focus of interest for NGL because they promise high resolution and small line edge roughness (LER), but no suitable resist candidate has emerged yet that fulfills all of the industry's criteria. We have previously shown first extreme ultraviolet lithography (EUVL) exposures for a new fullerene derivative based three-component negative tone chemically amplified resist with suitable properties close to or within the target range of the resist metrics as set out in the International Technology Roadmap for Semiconductors for 2016. Here we present the results of our efforts to optimize the EUVL performance of our resist system especially with regards to LER.",
keywords = "Chemically amplified resist, EUV lithography, Fullerene, Molecular resist",
author = "A. Frommhold and Yang, \{D. X.\} and A. McClelland and X. Xue and Y. Ekinci and Palmer, \{R. E.\} and Robinson, \{A. P.G.\}",
year = "2014",
doi = "10.1117/12.2046268",
language = "English",
isbn = "9780819499745",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",
booktitle = "Advances in Patterning Materials and Processes XXXI",
address = "United States",
note = "Advances in Patterning Materials and Processes XXXI ; Conference date: 24-02-2014 Through 27-02-2014",
}