Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography

Andreas Frommhold; Alexandra McClelland; John Roth; Roberto A. Fallica; Yasin Ekinci; Alex P.G. Robinson

doi:10.1117/12.2219221

Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography

Andreas Frommhold, Alexandra McClelland, John Roth, Roberto A. Fallica, Yasin Ekinci, Alex P.G. Robinson

Chemical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have recently introduced a new molecular resist system that demonstrates high-resolution capability. A series of studies such as quencher choice and loading was conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 3.56 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to resolve 11 nm hp features with 5.9 nm LWR. First exposure results on an NXE3300 are also presented. We have also begun to investigate the addition of metals to EUV photoresist as a means to increase sensitivity and modify secondary electron blur. Initial results for one of the metal additives show that the sensitivity could be enhanced by up to 60 percent.

Original language	English
Title of host publication	Extreme Ultraviolet (EUV) Lithography VII
Editors	Eric M. Panning, Kenneth A. Goldberg
Publisher	SPIE
ISBN (Electronic)	9781510600119
DOIs	https://doi.org/10.1117/12.2219221
Publication status	Published - 2016
Event	Extreme Ultraviolet (EUV) Lithography VII - San Jose, United States Duration: 22 Feb 2016 → 25 Feb 2016

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9776
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Extreme Ultraviolet (EUV) Lithography VII
Country/Territory	United States
City	San Jose
Period	22/02/16 → 25/02/16

Bibliographical note

Publisher Copyright:
© 2016 SPIE.

Keywords

EUV Lithography
Molecular Resist
Resist Sensitivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2219221

Cite this

Frommhold, A., McClelland, A., Roth, J., Fallica, R. A., Ekinci, Y., & Robinson, A. P. G. (2016). Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography. In E. M. Panning, & K. A. Goldberg (Eds.), Extreme Ultraviolet (EUV) Lithography VII Article 977614 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9776). SPIE. https://doi.org/10.1117/12.2219221

@inproceedings{0dde30bd122c46d68a955533ddc033fb,

title = "Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography",

abstract = "We have recently introduced a new molecular resist system that demonstrates high-resolution capability. A series of studies such as quencher choice and loading was conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 3.56 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to resolve 11 nm hp features with 5.9 nm LWR. First exposure results on an NXE3300 are also presented. We have also begun to investigate the addition of metals to EUV photoresist as a means to increase sensitivity and modify secondary electron blur. Initial results for one of the metal additives show that the sensitivity could be enhanced by up to 60 percent.",

keywords = "EUV Lithography, Molecular Resist, Resist Sensitivity",

author = "Andreas Frommhold and Alexandra McClelland and John Roth and Fallica, {Roberto A.} and Yasin Ekinci and Robinson, {Alex P.G.}",

note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; Extreme Ultraviolet (EUV) Lithography VII ; Conference date: 22-02-2016 Through 25-02-2016",

year = "2016",

doi = "10.1117/12.2219221",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Panning, {Eric M.} and Goldberg, {Kenneth A.}",

booktitle = "Extreme Ultraviolet (EUV) Lithography VII",

}

Frommhold, A, McClelland, A, Roth, J, Fallica, RA, Ekinci, Y & Robinson, APG 2016, Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography. in EM Panning & KA Goldberg (eds), Extreme Ultraviolet (EUV) Lithography VII., 977614, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9776, SPIE, Extreme Ultraviolet (EUV) Lithography VII, San Jose, United States, 22/02/16. https://doi.org/10.1117/12.2219221

Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography. / Frommhold, Andreas; McClelland, Alexandra; Roth, John et al.
Extreme Ultraviolet (EUV) Lithography VII. ed. / Eric M. Panning; Kenneth A. Goldberg. SPIE, 2016. 977614 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9776).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography

AU - Frommhold, Andreas

AU - McClelland, Alexandra

AU - Roth, John

AU - Fallica, Roberto A.

AU - Ekinci, Yasin

AU - Robinson, Alex P.G.

PY - 2016

Y1 - 2016

N2 - We have recently introduced a new molecular resist system that demonstrates high-resolution capability. A series of studies such as quencher choice and loading was conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 3.56 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to resolve 11 nm hp features with 5.9 nm LWR. First exposure results on an NXE3300 are also presented. We have also begun to investigate the addition of metals to EUV photoresist as a means to increase sensitivity and modify secondary electron blur. Initial results for one of the metal additives show that the sensitivity could be enhanced by up to 60 percent.

AB - We have recently introduced a new molecular resist system that demonstrates high-resolution capability. A series of studies such as quencher choice and loading was conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 3.56 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to resolve 11 nm hp features with 5.9 nm LWR. First exposure results on an NXE3300 are also presented. We have also begun to investigate the addition of metals to EUV photoresist as a means to increase sensitivity and modify secondary electron blur. Initial results for one of the metal additives show that the sensitivity could be enhanced by up to 60 percent.

KW - EUV Lithography

KW - Molecular Resist

KW - Resist Sensitivity

UR - http://www.scopus.com/inward/record.url?scp=84981323599&partnerID=8YFLogxK

U2 - 10.1117/12.2219221

DO - 10.1117/12.2219221

M3 - Conference contribution

AN - SCOPUS:84981323599

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Extreme Ultraviolet (EUV) Lithography VII

A2 - Panning, Eric M.

A2 - Goldberg, Kenneth A.

PB - SPIE

T2 - Extreme Ultraviolet (EUV) Lithography VII

Y2 - 22 February 2016 through 25 February 2016

ER -

Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography

Abstract

Publication series

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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Cite this