On nucleation and growth mechanisms of EBPVD zirconia films on porous NiO-ZrO2 substrate

O. Vasylyev; M. Brychevskyi; I. Brodnikovskyi; L. Dubykivskyi; M. Andrzejczuk; M. Spychalski; M. Lewandowska; K. Kurzydlowski; R. Steinberger-Wilckens; J. Mertens; J. Malzbender

doi:10.1109/OMEE.2012.6464786

On nucleation and growth mechanisms of EBPVD zirconia films on porous NiO-ZrO₂ substrate

O. Vasylyev, M. Brychevskyi, I. Brodnikovskyi, L. Dubykivskyi, M. Andrzejczuk, M. Spychalski, M. Lewandowska, K. Kurzydlowski, R. Steinberger-Wilckens, J. Mertens, J. Malzbender

Chemical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Thin structure of the anode-electrolyte interface (AEI) was studied, and plausible nucleation and growth mechanisms at electron-beam physical vapor deposition (EB-PVD) were established. ZrO₂ condensates with two mechanisms - planar and cellular ones like it happens at solidification from liquid phase. ZrO₂ condensation on ZrO₂ and NiO phases occurs with two different routes. On ZrO₂ phase, layer of planar growth is formed with 'defective layer by defective layer' mechanism. On NiO, the layer is cellular from the very beginning of the deposition process. The layer of planar growth is formed as 'dense layer by dense layer'. Deposition affected zone (DAZ) is clearly distinguished.

Original language	English
Title of host publication	2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)
Editors	M. Shpotyuk
Publisher	IEEE
Pages	92-93
Number of pages	2
ISBN (Electronic)	9781467344937
ISBN (Print)	9781467344913
DOIs	https://doi.org/10.1109/OMEE.2012.6464786
Publication status	Published - 21 Feb 2013
Event	International Conference on Oxide Materials for Electronic Engineering, OMEE 2012 - Lviv, United Kingdom Duration: 3 Sept 2012 → 7 Sept 2012

Publication series

Name	IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)
Publisher	IEEE

Conference

Conference	International Conference on Oxide Materials for Electronic Engineering, OMEE 2012
Country/Territory	United Kingdom
City	Lviv
Period	3/09/12 → 7/09/12

Keywords

influence of substrate
nucleation and growth mechanisms
solid oxide fuel cell
zirconia EB-PVD film

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/OMEE.2012.6464786

Cite this

Vasylyev, O., Brychevskyi, M., Brodnikovskyi, I., Dubykivskyi, L., Andrzejczuk, M., Spychalski, M., Lewandowska, M., Kurzydlowski, K., Steinberger-Wilckens, R., Mertens, J., & Malzbender, J. (2013). On nucleation and growth mechanisms of EBPVD zirconia films on porous NiO-ZrO₂ substrate. In M. Shpotyuk (Ed.), 2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) (pp. 92-93). Article 6464786 (IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)). IEEE. https://doi.org/10.1109/OMEE.2012.6464786

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title = "On nucleation and growth mechanisms of EBPVD zirconia films on porous NiO-ZrO2 substrate",

abstract = "Thin structure of the anode-electrolyte interface (AEI) was studied, and plausible nucleation and growth mechanisms at electron-beam physical vapor deposition (EB-PVD) were established. ZrO2 condensates with two mechanisms - planar and cellular ones like it happens at solidification from liquid phase. ZrO2 condensation on ZrO2 and NiO phases occurs with two different routes. On ZrO2 phase, layer of planar growth is formed with 'defective layer by defective layer' mechanism. On NiO, the layer is cellular from the very beginning of the deposition process. The layer of planar growth is formed as 'dense layer by dense layer'. Deposition affected zone (DAZ) is clearly distinguished.",

keywords = "influence of substrate, nucleation and growth mechanisms, solid oxide fuel cell, zirconia EB-PVD film",

author = "O. Vasylyev and M. Brychevskyi and I. Brodnikovskyi and L. Dubykivskyi and M. Andrzejczuk and M. Spychalski and M. Lewandowska and K. Kurzydlowski and R. Steinberger-Wilckens and J. Mertens and J. Malzbender",

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doi = "10.1109/OMEE.2012.6464786",

language = "English",

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series = "IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)",

publisher = "IEEE",

pages = "92--93",

editor = "M. Shpotyuk",

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note = "International Conference on Oxide Materials for Electronic Engineering, OMEE 2012 ; Conference date: 03-09-2012 Through 07-09-2012",

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Vasylyev, O, Brychevskyi, M, Brodnikovskyi, I, Dubykivskyi, L, Andrzejczuk, M, Spychalski, M, Lewandowska, M, Kurzydlowski, K, Steinberger-Wilckens, R, Mertens, J & Malzbender, J 2013, On nucleation and growth mechanisms of EBPVD zirconia films on porous NiO-ZrO₂ substrate. in M Shpotyuk (ed.), 2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)., 6464786, IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE), IEEE, pp. 92-93, International Conference on Oxide Materials for Electronic Engineering, OMEE 2012, Lviv, United Kingdom, 3/09/12. https://doi.org/10.1109/OMEE.2012.6464786

On nucleation and growth mechanisms of EBPVD zirconia films on porous NiO-ZrO₂ substrate. / Vasylyev, O.; Brychevskyi, M.; Brodnikovskyi, I. et al.
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE). ed. / M. Shpotyuk. IEEE, 2013. p. 92-93 6464786 (IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - On nucleation and growth mechanisms of EBPVD zirconia films on porous NiO-ZrO2 substrate

AU - Vasylyev, O.

AU - Brychevskyi, M.

AU - Brodnikovskyi, I.

AU - Dubykivskyi, L.

AU - Andrzejczuk, M.

AU - Spychalski, M.

AU - Lewandowska, M.

AU - Kurzydlowski, K.

AU - Steinberger-Wilckens, R.

AU - Mertens, J.

AU - Malzbender, J.

PY - 2013/2/21

Y1 - 2013/2/21

N2 - Thin structure of the anode-electrolyte interface (AEI) was studied, and plausible nucleation and growth mechanisms at electron-beam physical vapor deposition (EB-PVD) were established. ZrO2 condensates with two mechanisms - planar and cellular ones like it happens at solidification from liquid phase. ZrO2 condensation on ZrO2 and NiO phases occurs with two different routes. On ZrO2 phase, layer of planar growth is formed with 'defective layer by defective layer' mechanism. On NiO, the layer is cellular from the very beginning of the deposition process. The layer of planar growth is formed as 'dense layer by dense layer'. Deposition affected zone (DAZ) is clearly distinguished.

AB - Thin structure of the anode-electrolyte interface (AEI) was studied, and plausible nucleation and growth mechanisms at electron-beam physical vapor deposition (EB-PVD) were established. ZrO2 condensates with two mechanisms - planar and cellular ones like it happens at solidification from liquid phase. ZrO2 condensation on ZrO2 and NiO phases occurs with two different routes. On ZrO2 phase, layer of planar growth is formed with 'defective layer by defective layer' mechanism. On NiO, the layer is cellular from the very beginning of the deposition process. The layer of planar growth is formed as 'dense layer by dense layer'. Deposition affected zone (DAZ) is clearly distinguished.

KW - influence of substrate

KW - nucleation and growth mechanisms

KW - solid oxide fuel cell

KW - zirconia EB-PVD film

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DO - 10.1109/OMEE.2012.6464786

M3 - Conference contribution

AN - SCOPUS:84881652341

SN - 9781467344913

T3 - IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)

SP - 92

EP - 93

BT - 2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)

A2 - Shpotyuk, M.

PB - IEEE

T2 - International Conference on Oxide Materials for Electronic Engineering, OMEE 2012

Y2 - 3 September 2012 through 7 September 2012

ER -

Vasylyev O, Brychevskyi M, Brodnikovskyi I, Dubykivskyi L, Andrzejczuk M, Spychalski M et al. On nucleation and growth mechanisms of EBPVD zirconia films on porous NiO-ZrO₂ substrate. In Shpotyuk M, editor, 2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE). IEEE. 2013. p. 92-93. 6464786. (IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)). doi: 10.1109/OMEE.2012.6464786