Abstract
From low energy electron microscopy observations of the surface topography of Si(001) during homoepitaxial growth at 650 ±C, we have determined the nucleation density profile on top of a “base” island, and the distribution of the base island radius at the time of nucleation. Comparison with homogeneous nucleation theory yields a typical critical nucleus size of ,650 dimers, and allows nucleation on Si(001) to be understood in a common framework with equilibrium step-edge fluctuations and 2D island ripening.
| Original language | English |
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| Pages (from-to) | 2770-2773 |
| Journal | Physical Review Letters |
| Volume | 76 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 8 Apr 1996 |