Nuclear quadruple holeburning in preparation-dependent EuVO4

PC Hansen; M Lazzouni; MJM Leask; BM Wanklyn; BE Watts

doi:10.1051/jphyscol:19888403

Nuclear quadruple holeburning in preparation-dependent EuVO4

PC Hansen
, M Lazzouni
, MJM Leask
, BM Wanklyn
, BE Watts

Psychology

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports on the study of EuVO4 samples grown from different fluxes. It is the first application of optical holeburning to investigate preparation-dependency between defect lines in samples of nominally the same compound. Analysis suggests that very few of the defect lines are common to the different growths.

Original language	English
Pages (from-to)	C8-889-C8-890
Journal	Le Journal de Physique Colloques
Volume	49
Issue number	C8
DOIs	https://doi.org/10.1051/jphyscol:19888403
Publication status	Published - 1988

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title = "Nuclear quadruple holeburning in preparation-dependent EuVO4",

abstract = "This paper reports on the study of EuVO4 samples grown from different fluxes. It is the first application of optical holeburning to investigate preparation-dependency between defect lines in samples of nominally the same compound. Analysis suggests that very few of the defect lines are common to the different growths.",

author = "PC Hansen and M Lazzouni and MJM Leask and BM Wanklyn and BE Watts",

year = "1988",

doi = "10.1051/jphyscol:19888403",

language = "English",

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pages = "C8--889--C8--890",

journal = "Le Journal de Physique Colloques",

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AU - Hansen, PC

AU - Lazzouni, M

AU - Leask, MJM

AU - Wanklyn, BM

AU - Watts, BE

PY - 1988

Y1 - 1988

N2 - This paper reports on the study of EuVO4 samples grown from different fluxes. It is the first application of optical holeburning to investigate preparation-dependency between defect lines in samples of nominally the same compound. Analysis suggests that very few of the defect lines are common to the different growths.

AB - This paper reports on the study of EuVO4 samples grown from different fluxes. It is the first application of optical holeburning to investigate preparation-dependency between defect lines in samples of nominally the same compound. Analysis suggests that very few of the defect lines are common to the different growths.

U2 - 10.1051/jphyscol:19888403

DO - 10.1051/jphyscol:19888403

M3 - Article

VL - 49

SP - C8-889-C8-890

JO - Le Journal de Physique Colloques

JF - Le Journal de Physique Colloques

IS - C8

ER -

Nuclear quadruple holeburning in preparation-dependent EuVO4

Abstract

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