Abstract
This paper reports on the study of EuVO4 samples grown from different fluxes. It is the first application of optical holeburning to investigate preparation-dependency between defect lines in samples of nominally the same compound. Analysis suggests that very few of the defect lines are common to the different growths.
Original language | English |
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Pages (from-to) | C8-889-C8-890 |
Journal | Le Journal de Physique Colloques |
Volume | 49 |
Issue number | C8 |
DOIs | |
Publication status | Published - 1988 |