Abstract
We have used angle-resolved photoemission spectroscopy to investigate the band structure of ReS2, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of structural distortion and spin-orbit coupling. We further show how this leads to a strong in-plane anisotropy of the electronic structure, with quasi-one-dimensional bands reflecting predominant hopping along zigzag Re chains. We find that this does not persist up to the top of the valence band, where a more three-dimensional character is recovered with the fundamental band gap located away from the Brillouin zone center along kz. These experiments are in good agreement with our density-functional theory calculations, shedding light on the bulk electronic structure of ReS2, and how it can be expected to evolve when thinned to a single layer.
| Original language | English |
|---|---|
| Article number | 085205 |
| Journal | Physical Review B |
| Volume | 96 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 16 Aug 2017 |
Bibliographical note
Funding Information:We are grateful to Daniel Wolverson, University of Bath, UK, for discussing the results of their similar measurements with us prior to publication, which also appear to be consistent with the data presented here . We gratefully acknowledge F. Bertran and P. Le Fèvre for ongoing technical support of the CASIOPEE beam line at SOLEIL. This work was supported by the Engineering and Physical Sciences Research Council, UK (Grant No. EP/M023427/1). This work also made use of the ARCHER UK National Supercomputing Service ( http://www.archer.ac.uk ), via membership of the UK's HEC Materials Chemistry Consortium, which is funded by EPSRC (EP/L000202). We thank Diamond Light Source (via Proposals No. SI9500 and No. SI11383) and SOLEIL synchrotrons for access to Beamlines I05 and CASSIOPEE, respectively, which contributed to the results presented here. A.M.G. acknowledges Diamond Light Source for the cosponsorship of a studentship on the EPSRC Centre for Doctoral Training in Molecular Modelling and Materials Science (EP/L015862/1). J.M.R., L.B., and O.J.C. acknowledge EPSRC for Ph.D. studentship funding through Grants No. EP/L505079/1, No. EP/G03673X/1, and No. EP/K503162/1, respectively. W.M. received support from Thailand Research Fund and Suranaree University of Technology (Grant No. BRG5880010). T.S. was supported by a CREST project from Japan Science and Technology Agency (JST) and a Grants-in-Aid for Scientific Research (B) (16H03847) from Japan Society for the Promotion of Science (JSPS). D.O.S. acknowledges support from the EPSRC (EP/N01572X/1). D.O.S. and P.D.C.K. acknowledge membership of the Materials Design Network. Data underpinning this publication can be accessed at http://dx.doi.org/10.17630/6619d537-c731-48b8-85e3-cfb863244f96 .
Publisher Copyright:
© 2017 American Physical Society.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics