Multilayered metal capping barrier including CuSiN, for sub-65-nm technology nodes

Keyphrases

• 65 Nm Technology 100%
• Technology Node 100%
• Cu Film 100%
• Metal Capping 100%
• Elevated Temperature 50%
• Mechanical Characteristics 50%
• Characterization Studies 50%
• TiCN 50%
• Highly Reliable 50%
• Ultrathin 50%
• Interfacial Adhesion 50%
• Dielectric Barrier 50%
• Nanoporous 50%
• Hermeticity 50%
• Copper Diffusion 50%
• Self-aligned 50%

Engineering

• Nodes 100%
• Cu Film 100%
• Dielectrics 50%
• Elevated Temperature 50%
• Interfacial Adhesion 50%

Material Science

• Film 100%
• Dielectric Material 33%