Monte Carlo Simulations of High-Speed InSb-InA1Sb FETs

Keyphrases

• Buffer Doping 33%
• Cut-off Frequency 33%
• Doping Density 33%
• Drain Voltage 33%
• Electron Drift Velocity 33%
• Field-effect Transistors 33%
• Hole Density 33%
• Impact Ionization 66%
• InSb 100%
• Maximum Speed 33%
• Monte Carlo Simulation 100%
• Substrate Bias 66%
• Velocity Bias 33%

Engineering

• Cutoff Frequency 50%
• Doping Density 50%
• Drain Voltage 50%
• Drift Velocity 50%
• Field Effect Transistor 100%
• Field-Effect Transistor 50%
• Impact Ionization 100%
• Substrate Bias 100%