TY - JOUR
T1 - Measurement of probability distributions for internal stresses in dislocated crystals
AU - Wilkinson, Angus J.
AU - Tarleton, Edmund
AU - Vilalta-Clemente, Arantxa
AU - Jiang, Jun
AU - Britton, T. Benjamin
AU - Collins, David M.
PY - 2014/11/3
Y1 - 2014/11/3
N2 - Here, we analyse residual stress distributions obtained from various crystal systems using high resolution electron backscatter diffraction (EBSD) measurements. Histograms showing stress probability distributions exhibit tails extending to very high stress levels. We demonstrate that these extreme stress values are consistent with the functional form that should be expected for dislocated crystals. Analysis initially developed by Groma and co-workers for X-ray line profile analysis and based on the so-called "restricted second moment of the probability distribution" can be used to estimate the total dislocation density. The generality of the results are illustrated by application to three quite different systems, namely, face centred cubic Cu deformed in uniaxial tension, a body centred cubic steel deformed to larger strain by cold rolling, and hexagonal InAlN layers grown on misfitting sapphire and silicon carbide substrates.
AB - Here, we analyse residual stress distributions obtained from various crystal systems using high resolution electron backscatter diffraction (EBSD) measurements. Histograms showing stress probability distributions exhibit tails extending to very high stress levels. We demonstrate that these extreme stress values are consistent with the functional form that should be expected for dislocated crystals. Analysis initially developed by Groma and co-workers for X-ray line profile analysis and based on the so-called "restricted second moment of the probability distribution" can be used to estimate the total dislocation density. The generality of the results are illustrated by application to three quite different systems, namely, face centred cubic Cu deformed in uniaxial tension, a body centred cubic steel deformed to larger strain by cold rolling, and hexagonal InAlN layers grown on misfitting sapphire and silicon carbide substrates.
UR - http://www.scopus.com/inward/record.url?scp=84909960065&partnerID=8YFLogxK
U2 - 10.1063/1.4901219
DO - 10.1063/1.4901219
M3 - Article
AN - SCOPUS:84909960065
SN - 0003-6951
VL - 105
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 18
M1 - 181907
ER -