Low voltage thin film transistors based on solution-processed In2O3:W. A remarkably stable semiconductor under negative and positive bias stress

Thin film transistors (TFTs) based on metal oxide semiconductors have been attracting considerable attention over the last two decades as
alternatives to a-Si due to their superior electrical performance coupled with optical transparency to visible light and mechanical flexibility.
They have become highly desirable for applications in backplane electronics for active-matrix organic light-emitting diodes including flexible
displays and other newly emerging areas. Indeed, the performance of oxide-based TFTs, i.e., the carrier mobility, exceeds that of amorphous
a-Si-based TFTs, and their stability characteristics exceed those of organic semiconductors.