Local structure of Ge2Sb2Te5 during crystallization under pressure

O. M. Roscioni; P. S. Branicio; J. Kalikka; X. Zhou; R. E. Simpson

doi:10.1063/1.5027171

Local structure of Ge₂Sb₂Te₅ during crystallization under pressure

O. M. Roscioni
, P. S. Branicio
, J. Kalikka
, X. Zhou
, R. E. Simpson

Electronic, Electrical and Systems Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The role of stress on the crystallization process of the phase change data storage material, Ge₂Sb₂Te₅, is studied. When thin Ge₂Sb₂Te₅ films are capped with Si₃N₄, stress is generated in the Ge₂Sb₂Te₅ layer which causes the crystallization temperature to increase. Si₃N₄ films of 25 nm thickness increase the crystallization temperature from 446 K to 464 K. We show that stress predominantly destabilizes voids and increases the number of Ge-Sb and homopolar bonds in the vicinity of Ge atoms, and this makes the crystallization less probable, thus resulting in the increase in the measured temperature.

Original language	English
Article number	151901
Journal	Applied Physics Letters
Volume	112
Issue number	15
DOIs	https://doi.org/10.1063/1.5027171
Publication status	Published - 9 Apr 2018

Bibliographical note

Funding Information:
This work was performed under the auspices of the SUTD-MIT International Design Center. We gratefully acknowledge financial support from A-star (Grant No. 142020046) and MoE (Grant No. MOE2017-T2-1-161). The computational part of this work was supported by the A*STAR Computational Resource Centre (A*CRC) through the use of its high performance computing facilities.

Publisher Copyright:
© 2018 Author(s).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.5027171

Cite this

@article{5730c54732144bc88e0f928a55ca95d3,

title = "Local structure of Ge2Sb2Te5 during crystallization under pressure",

abstract = "The role of stress on the crystallization process of the phase change data storage material, Ge2Sb2Te5, is studied. When thin Ge2Sb2Te5 films are capped with Si3N4, stress is generated in the Ge2Sb2Te5 layer which causes the crystallization temperature to increase. Si3N4 films of 25 nm thickness increase the crystallization temperature from 446 K to 464 K. We show that stress predominantly destabilizes voids and increases the number of Ge-Sb and homopolar bonds in the vicinity of Ge atoms, and this makes the crystallization less probable, thus resulting in the increase in the measured temperature.",

author = "Roscioni, \{O. M.\} and Branicio, \{P. S.\} and J. Kalikka and X. Zhou and Simpson, \{R. E.\}",

note = "Funding Information: This work was performed under the auspices of the SUTD-MIT International Design Center. We gratefully acknowledge financial support from A-star (Grant No. 142020046) and MoE (Grant No. MOE2017-T2-1-161). The computational part of this work was supported by the A*STAR Computational Resource Centre (A*CRC) through the use of its high performance computing facilities. Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

month = apr,

day = "9",

doi = "10.1063/1.5027171",

language = "English",

volume = "112",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Local structure of Ge2Sb2Te5 during crystallization under pressure

AU - Roscioni, O. M.

AU - Branicio, P. S.

AU - Kalikka, J.

AU - Zhou, X.

AU - Simpson, R. E.

N1 - Funding Information: This work was performed under the auspices of the SUTD-MIT International Design Center. We gratefully acknowledge financial support from A-star (Grant No. 142020046) and MoE (Grant No. MOE2017-T2-1-161). The computational part of this work was supported by the A*STAR Computational Resource Centre (A*CRC) through the use of its high performance computing facilities. Publisher Copyright: © 2018 Author(s).

PY - 2018/4/9

Y1 - 2018/4/9

N2 - The role of stress on the crystallization process of the phase change data storage material, Ge2Sb2Te5, is studied. When thin Ge2Sb2Te5 films are capped with Si3N4, stress is generated in the Ge2Sb2Te5 layer which causes the crystallization temperature to increase. Si3N4 films of 25 nm thickness increase the crystallization temperature from 446 K to 464 K. We show that stress predominantly destabilizes voids and increases the number of Ge-Sb and homopolar bonds in the vicinity of Ge atoms, and this makes the crystallization less probable, thus resulting in the increase in the measured temperature.

AB - The role of stress on the crystallization process of the phase change data storage material, Ge2Sb2Te5, is studied. When thin Ge2Sb2Te5 films are capped with Si3N4, stress is generated in the Ge2Sb2Te5 layer which causes the crystallization temperature to increase. Si3N4 films of 25 nm thickness increase the crystallization temperature from 446 K to 464 K. We show that stress predominantly destabilizes voids and increases the number of Ge-Sb and homopolar bonds in the vicinity of Ge atoms, and this makes the crystallization less probable, thus resulting in the increase in the measured temperature.

UR - https://www.scopus.com/pages/publications/85045218297

U2 - 10.1063/1.5027171

DO - 10.1063/1.5027171

M3 - Article

AN - SCOPUS:85045218297

SN - 0003-6951

VL - 112

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 151901

ER -