Local structure of Ge2Sb2Te5 during crystallization under pressure

O. M. Roscioni, P. S. Branicio, J. Kalikka, X. Zhou, R. E. Simpson

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The role of stress on the crystallization process of the phase change data storage material, Ge2Sb2Te5, is studied. When thin Ge2Sb2Te5 films are capped with Si3N4, stress is generated in the Ge2Sb2Te5 layer which causes the crystallization temperature to increase. Si3N4 films of 25 nm thickness increase the crystallization temperature from 446 K to 464 K. We show that stress predominantly destabilizes voids and increases the number of Ge-Sb and homopolar bonds in the vicinity of Ge atoms, and this makes the crystallization less probable, thus resulting in the increase in the measured temperature.

Original languageEnglish
Article number151901
JournalApplied Physics Letters
Volume112
Issue number15
DOIs
Publication statusPublished - 9 Apr 2018

Bibliographical note

Funding Information:
This work was performed under the auspices of the SUTD-MIT International Design Center. We gratefully acknowledge financial support from A-star (Grant No. 142020046) and MoE (Grant No. MOE2017-T2-1-161). The computational part of this work was supported by the A*STAR Computational Resource Centre (A*CRC) through the use of its high performance computing facilities.

Publisher Copyright:
© 2018 Author(s).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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