Investigation of magnetic anisotropy in the Ni-Ge and Ni(NiO)-Ge thin films

Dogan Kaya, Mustafa Akyol, Yitao Wang, Quanmin Guo, Faruk Karadag, Ahmet Ekicibil

Research output: Contribution to journalArticlepeer-review

Abstract

We studied the structural and magnetic properties of Ni-Ge and Ni(NiO)-Ge films deposited by physical vapor deposition technique on the Si/SiO2 substrate. The x-ray diffraction (XRD) analysis show that as-prepared samples exhibit clear peaks of Ge, Ni, and Au with a cubic symmetry belongs to space group Fm3̅m. Due to the thermal annealing process at 350°C, NiO layer formed on Ni layer. The NiO formation has reduced the interaction of Ni-Ge interlayer which is confirmed by XRD data. Investigation of temperature-dependent magnetic moment revealed the Neel and the critical temperatures as 93 and 294 K, respectively. The hysteresis loops showed that the preferred magnetization direction for samples at 300 K is the in-plane (parallel) which reaches saturation easier than out-of-plane (perpendicular) loops. The formation of NiGe interlayer resulted in a magnetically dead-region which led to decrease ferromagnetic domain and the coercive field.
Original languageEnglish
Article number129662
Number of pages8
JournalJournal of Molecular Structure
Volume1230
Early online date27 Nov 2020
DOIs
Publication statusPublished - 15 Apr 2021

Keywords

  • NiGe thin fims
  • Structural properties
  • Magnetic anisotropy
  • XRD
  • SEM
  • PPMS

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