Improved ink-jet-printed CdSe quantum dot light-emitting diodes with minimized hole transport layer erosion

Haodong Tang; Siqi Jia; Shihao Ding; Pai Liu; Jingrui Ma; Xiangtian Xiao; Xiangwei Qu; Haochen Liu; Hongcheng Yang; Bing Xu; Wei Chen; Guangyu Li; Zoe Pikramenou; Carl Anthony; Kai Wang; Xiao Wei Sun

doi:10.1021/acsaelm.1c00210

Improved ink-jet-printed CdSe quantum dot light-emitting diodes with minimized hole transport layer erosion

Haodong Tang, Siqi Jia, Shihao Ding, Pai Liu, Jingrui Ma, Xiangtian Xiao, Xiangwei Qu, Haochen Liu, Hongcheng Yang, Bing Xu, Wei Chen, Guangyu Li, Zoe Pikramenou, Carl Anthony, Kai Wang^*, Xiao Wei Sun

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

Ink-jet printing is a promising deposition technology, which is capable of large-area fabrication and mask-free patterning. For ink-jet-printed quantum dot (QD) light-emitting diodes (LEDs), the QDs are commonly dissolved in a mixture of solvent and thickener ink system. However, the hole transport layer could be eroded by this QD ink, leading to a rough surface morphology and resulting in the leakage of carriers and low device performance. This phenomenon was first and directly observed by using an atomic force microscope and a cross-sectional scanning electron microscope. We, therefore, redesigned the annealing process of the hole transport layer to achieve an optimized smooth surface with a reduced number of defects for ink-jet-printed QD LEDs (QLEDs). Optimized morphology brings back a maximum luminance of over 30,000 cd/m² and an external quantum efficiency of 7.52% for the ink-jet-printed red QLEDs using CdSe QDs, which are comparable to those of the spin-coated device. Moreover, the operation lifetime of the ink-jet-printed device is also enhanced by the restored surface morphology. An enhanced T₅₀ lifetime of the ink-jet-printed device at 1000 cd/m² is improved from 26 to 127 h, which converted to a long T₅₀ lifetime of 8013 h, when operated at 100 cd/m².

Original language	English
Pages (from-to)	3005-3014
Number of pages	10
Journal	ACS Applied Electronic Materials
Volume	3
Issue number	7
Early online date	1 Jun 2021
DOIs	https://doi.org/10.1021/acsaelm.1c00210
Publication status	Published - 27 Jul 2021

Bibliographical note

Funding Information:
H.T. and S.J. have contributed equally to this work. We would like to acknowledge support from the Ministry of Science and Technology of China (nos. 2016YFB0401702 and 2017YFE0120400), the National Natural Science Foundation of China (nos. 61674074, 61875082, and 61405089), the Guangdong Province’s Key R&D Program: Micro-LED Display and Ultra-high Brightness Micro-display Technology (no. 2019B010925001); Environmentally Friendly Quantum Dots Luminescent Materials (no. 2019B010924001), the Guangdong Basic and Applied Basic Research Foundation (no. 2019A1515110437), the Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting (no. 2017KSYS007), the Shenzhen Innovation Project (no. JCYJ20180305180629908), the Guangdong Youth Innovative Talents Project (no. 2018KQNCX228), and the Shenzhen Peacock Team Project (no. KQTD2016030111203005). The authors would like to acknowledge the technical support from Dongsheng He and Yang Qiu in SUSTech CRF.

Publisher Copyright:
© 2021 ACS Applied Electronic Materials. All rights reserved.

Keywords

annealing process
erosion
hole transporting layer
ink-jet printing
QLED
stability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrochemistry
Materials Chemistry

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10.1021/acsaelm.1c00210Licence: Creative Commons: Attribution-NonCommercial-NoDerivs (CC BY-NC-ND)

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Tang, H., Jia, S., Ding, S., Liu, P., Ma, J., Xiao, X., Qu, X., Liu, H., Yang, H., Xu, B., Chen, W., Li, G., Pikramenou, Z., Anthony, C., Wang, K., & Sun, X. W. (2021). Improved ink-jet-printed CdSe quantum dot light-emitting diodes with minimized hole transport layer erosion. ACS Applied Electronic Materials, 3(7), 3005-3014. Advance online publication. https://doi.org/10.1021/acsaelm.1c00210

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title = "Improved ink-jet-printed CdSe quantum dot light-emitting diodes with minimized hole transport layer erosion",

abstract = "Ink-jet printing is a promising deposition technology, which is capable of large-area fabrication and mask-free patterning. For ink-jet-printed quantum dot (QD) light-emitting diodes (LEDs), the QDs are commonly dissolved in a mixture of solvent and thickener ink system. However, the hole transport layer could be eroded by this QD ink, leading to a rough surface morphology and resulting in the leakage of carriers and low device performance. This phenomenon was first and directly observed by using an atomic force microscope and a cross-sectional scanning electron microscope. We, therefore, redesigned the annealing process of the hole transport layer to achieve an optimized smooth surface with a reduced number of defects for ink-jet-printed QD LEDs (QLEDs). Optimized morphology brings back a maximum luminance of over 30,000 cd/m2 and an external quantum efficiency of 7.52% for the ink-jet-printed red QLEDs using CdSe QDs, which are comparable to those of the spin-coated device. Moreover, the operation lifetime of the ink-jet-printed device is also enhanced by the restored surface morphology. An enhanced T50 lifetime of the ink-jet-printed device at 1000 cd/m2 is improved from 26 to 127 h, which converted to a long T50 lifetime of 8013 h, when operated at 100 cd/m2.",

keywords = "annealing process, erosion, hole transporting layer, ink-jet printing, QLED, stability",

author = "Haodong Tang and Siqi Jia and Shihao Ding and Pai Liu and Jingrui Ma and Xiangtian Xiao and Xiangwei Qu and Haochen Liu and Hongcheng Yang and Bing Xu and Wei Chen and Guangyu Li and Zoe Pikramenou and Carl Anthony and Kai Wang and Sun, {Xiao Wei}",

note = "Funding Information: H.T. and S.J. have contributed equally to this work. We would like to acknowledge support from the Ministry of Science and Technology of China (nos. 2016YFB0401702 and 2017YFE0120400), the National Natural Science Foundation of China (nos. 61674074, 61875082, and 61405089), the Guangdong Province{\textquoteright}s Key R&D Program: Micro-LED Display and Ultra-high Brightness Micro-display Technology (no. 2019B010925001); Environmentally Friendly Quantum Dots Luminescent Materials (no. 2019B010924001), the Guangdong Basic and Applied Basic Research Foundation (no. 2019A1515110437), the Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting (no. 2017KSYS007), the Shenzhen Innovation Project (no. JCYJ20180305180629908), the Guangdong Youth Innovative Talents Project (no. 2018KQNCX228), and the Shenzhen Peacock Team Project (no. KQTD2016030111203005). The authors would like to acknowledge the technical support from Dongsheng He and Yang Qiu in SUSTech CRF. Publisher Copyright: {\textcopyright} 2021 ACS Applied Electronic Materials. All rights reserved.",

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AU - Tang, Haodong

AU - Jia, Siqi

AU - Ding, Shihao

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AU - Ma, Jingrui

AU - Xiao, Xiangtian

AU - Qu, Xiangwei

AU - Liu, Haochen

AU - Yang, Hongcheng

AU - Xu, Bing

AU - Chen, Wei

AU - Li, Guangyu

AU - Pikramenou, Zoe

AU - Anthony, Carl

AU - Wang, Kai

AU - Sun, Xiao Wei

N1 - Funding Information: H.T. and S.J. have contributed equally to this work. We would like to acknowledge support from the Ministry of Science and Technology of China (nos. 2016YFB0401702 and 2017YFE0120400), the National Natural Science Foundation of China (nos. 61674074, 61875082, and 61405089), the Guangdong Province’s Key R&D Program: Micro-LED Display and Ultra-high Brightness Micro-display Technology (no. 2019B010925001); Environmentally Friendly Quantum Dots Luminescent Materials (no. 2019B010924001), the Guangdong Basic and Applied Basic Research Foundation (no. 2019A1515110437), the Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting (no. 2017KSYS007), the Shenzhen Innovation Project (no. JCYJ20180305180629908), the Guangdong Youth Innovative Talents Project (no. 2018KQNCX228), and the Shenzhen Peacock Team Project (no. KQTD2016030111203005). The authors would like to acknowledge the technical support from Dongsheng He and Yang Qiu in SUSTech CRF. Publisher Copyright: © 2021 ACS Applied Electronic Materials. All rights reserved.

PY - 2021/7/27

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N2 - Ink-jet printing is a promising deposition technology, which is capable of large-area fabrication and mask-free patterning. For ink-jet-printed quantum dot (QD) light-emitting diodes (LEDs), the QDs are commonly dissolved in a mixture of solvent and thickener ink system. However, the hole transport layer could be eroded by this QD ink, leading to a rough surface morphology and resulting in the leakage of carriers and low device performance. This phenomenon was first and directly observed by using an atomic force microscope and a cross-sectional scanning electron microscope. We, therefore, redesigned the annealing process of the hole transport layer to achieve an optimized smooth surface with a reduced number of defects for ink-jet-printed QD LEDs (QLEDs). Optimized morphology brings back a maximum luminance of over 30,000 cd/m2 and an external quantum efficiency of 7.52% for the ink-jet-printed red QLEDs using CdSe QDs, which are comparable to those of the spin-coated device. Moreover, the operation lifetime of the ink-jet-printed device is also enhanced by the restored surface morphology. An enhanced T50 lifetime of the ink-jet-printed device at 1000 cd/m2 is improved from 26 to 127 h, which converted to a long T50 lifetime of 8013 h, when operated at 100 cd/m2.

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Improved ink-jet-printed CdSe quantum dot light-emitting diodes with minimized hole transport layer erosion

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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