High-performance quantum well amplifiers for the WDM system

Hooshang Ghafouri-Shiraz, Mingjun Xia

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a new high-performance quantum well amplifier with longitudinal non-uniform distributed compressive strain for the WDM system. Quantum well transmission line modelling (QW-TLM) method is adopted to analyze the scattering spectra of electron transitions and it was found that the decreased carrier density can induce the blue shift and lower magnitude of electron scattering spectrum at a certain wave vector while increasing the compressive strain can lead to the red shift and enhanced magnitude of electron scattering spectrum at the same wave vector. Based on the theoretical analysis, the longitudinal linearly compressively strained quantum well amplifiers are proposed. Simulation results show that the method of distributing linear compressive strain along the quantum well amplifier cavity can effectively increase the amplifier spectral bandwidth and improve the output performance of QW-SOAs in the WDM system.
Original languageEnglish
Title of host publication2015 36th IEEE Sarnoff Symposium Proceedings
PublisherIEEE Xplore
Pages62-65
Number of pages4
ISBN (Electronic)978-1467380423
ISBN (Print)978-1479978908
DOIs
Publication statusPublished - 12 Nov 2015
EventThe 36th IEEE Sarnoff Symposium 2015 - New Jersey, Newark, United States
Duration: 20 Sep 201522 Sep 2015

Conference

ConferenceThe 36th IEEE Sarnoff Symposium 2015
Country/TerritoryUnited States
CityNewark
Period20/09/1522/09/15

Keywords

  • quantum well amplifier
  • non-uniform distributed compressive strain
  • WDM system

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