Growth mode and atomic structure of MnSi thin films on Si(111)

B. Geisler; P. Kratzer; T. Suzuki; T. Lutz; G. Costantini; K. Kern

doi:10.1103/PhysRevB.86.115428

Growth mode and atomic structure of MnSi thin films on Si(111)

B. Geisler^*, P. Kratzer, T. Suzuki, T. Lutz, G. Costantini, K. Kern

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Thin films of MnSi(111) in B20 structure formed by reactive epitaxy on Si(111) are studied using scanning tunneling microscopy (STM) and density functional theory calculations. Coexisting √3×√3 structures with high or low corrugation are observed and assigned to different Mn coverage by using a detailed analysis of simulated STM images. Comparison with our interpretation of STM images of films previously grown by codeposition of Mn and Si provides us with evidence that the stacking sequence of Mn and Si lattice planes depends on the growth protocol.

Original language	English
Article number	115428
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	86
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.86.115428
Publication status	Published - 19 Sept 2012

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.86.115428

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abstract = "Thin films of MnSi(111) in B20 structure formed by reactive epitaxy on Si(111) are studied using scanning tunneling microscopy (STM) and density functional theory calculations. Coexisting √3×√3 structures with high or low corrugation are observed and assigned to different Mn coverage by using a detailed analysis of simulated STM images. Comparison with our interpretation of STM images of films previously grown by codeposition of Mn and Si provides us with evidence that the stacking sequence of Mn and Si lattice planes depends on the growth protocol.",

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AU - Kratzer, P.

AU - Suzuki, T.

AU - Lutz, T.

AU - Costantini, G.

AU - Kern, K.

PY - 2012/9/19

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N2 - Thin films of MnSi(111) in B20 structure formed by reactive epitaxy on Si(111) are studied using scanning tunneling microscopy (STM) and density functional theory calculations. Coexisting √3×√3 structures with high or low corrugation are observed and assigned to different Mn coverage by using a detailed analysis of simulated STM images. Comparison with our interpretation of STM images of films previously grown by codeposition of Mn and Si provides us with evidence that the stacking sequence of Mn and Si lattice planes depends on the growth protocol.

AB - Thin films of MnSi(111) in B20 structure formed by reactive epitaxy on Si(111) are studied using scanning tunneling microscopy (STM) and density functional theory calculations. Coexisting √3×√3 structures with high or low corrugation are observed and assigned to different Mn coverage by using a detailed analysis of simulated STM images. Comparison with our interpretation of STM images of films previously grown by codeposition of Mn and Si provides us with evidence that the stacking sequence of Mn and Si lattice planes depends on the growth protocol.

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Growth mode and atomic structure of MnSi thin films on Si(111)

Abstract

ASJC Scopus subject areas

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