Fullerene derivatives as novel resist materials for fabrication of mems devices by electron beam lithography

Keyphrases

• High-resolution 100%
• Resist Material 100%
• Electron Beam Lithography 100%
• MEMS Devices 100%
• Fullerene Derivatives 100%
• Negative Resist 33%
• Order of Magnitude 33%
• Chloroform 33%
• Dry Etching 33%
• Wall Thickness 33%
• Lithography 33%
• Silicon Substrate 33%
• Electronic Devices 33%
• Organic Solvents 33%
• Electron Beam Resist 33%
• Spin Coating 33%
• Negative Tone 33%
• Methanofullerene 33%
• Hole Depth 33%
• Monochlorobenzene 33%
• Sub-20 Nm 33%
• Applications of Derivative 33%

Material Science

• Film 100%
• Lithography 100%
• Fullerene 100%
• Silicon 75%
• Microelectromechanical System 25%
• Organic Solvents 25%
• Spin Coating 25%