Ferroelectric lumped element filter/switch for microwave applications

Xu Wang; P. Bao; M.J. Lancaster; T.J. Jackson

doi:10.1109/EUMC.2008.4751382

Ferroelectric lumped element filter/switch for microwave applications

Xu Wang, P. Bao, M.J. Lancaster, T.J. Jackson

Electronic, Electrical and Systems Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

This paper describes the experimental performance of a ferroelectric lumped element filter/switch grown on silicon substrate. The filtering/switching operation is based on the dc electric field controlled dielectric constant of a Ba0.25Sr0.75TiO3 (BST) thin-film. The switch is made by changing the cut-off frequency of a low-pass filter. 18 dB isolation has been demonstrated under 15 V bias at 25 GHz with great consistency being observed among different samples. The properties of the BST thin-film has been extracted by comparing the electromagnetic full-wave simulation with the experimental measurements.

Original language	English
Title of host publication	Proceedings of the 38th European Microwave Conference, EuMC 2008
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	43-46
Number of pages	4
ISBN (Print)	9782874870064
DOIs	https://doi.org/10.1109/EUMC.2008.4751382
Publication status	Published - 2008

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10.1109/EUMC.2008.4751382

Advanced Microwave Devices for Frequency-Agile Applications
Lancaster, M. (Principal Investigator) & Jackson, T. (Co-Investigator)
Engineering & Physical Science Research Council
28/11/05 → 27/05/09
Project: Research Councils

Cite this

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title = "Ferroelectric lumped element filter/switch for microwave applications",

abstract = "This paper describes the experimental performance of a ferroelectric lumped element filter/switch grown on silicon substrate. The filtering/switching operation is based on the dc electric field controlled dielectric constant of a Ba0.25Sr0.75TiO3 (BST) thin-film. The switch is made by changing the cut-off frequency of a low-pass filter. 18 dB isolation has been demonstrated under 15 V bias at 25 GHz with great consistency being observed among different samples. The properties of the BST thin-film has been extracted by comparing the electromagnetic full-wave simulation with the experimental measurements.",

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AU - Jackson, T.J.

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AB - This paper describes the experimental performance of a ferroelectric lumped element filter/switch grown on silicon substrate. The filtering/switching operation is based on the dc electric field controlled dielectric constant of a Ba0.25Sr0.75TiO3 (BST) thin-film. The switch is made by changing the cut-off frequency of a low-pass filter. 18 dB isolation has been demonstrated under 15 V bias at 25 GHz with great consistency being observed among different samples. The properties of the BST thin-film has been extracted by comparing the electromagnetic full-wave simulation with the experimental measurements.

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DO - 10.1109/EUMC.2008.4751382

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AN - SCOPUS:62349087713

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SP - 43

EP - 46

BT - Proceedings of the 38th European Microwave Conference, EuMC 2008

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Ferroelectric lumped element filter/switch for microwave applications

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Advanced Microwave Devices for Frequency-Agile Applications

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