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Abstract
Metallurgical-grade silicon powder (10 m(2)/g surface area) has been porosified using a metal-assisted chemical etch process based on hydrofluoric acid-ferric chloride chemistry. By controlling the reagent concentrations and ratios, the degree of porosification has been varied. Initiating the reaction at temperatures below 0 degrees C, typically between -15 degrees C and -25 degrees C, yields etched powders with spectacularly increased surface area and pore volume (porosity). The reduced temperature, and its subsequent control, favors pore nucleation and propagation while minimizing bulk chemical etching. Using this process, mesoporous powders with surface areas up to 480 m(2)/g and pore volumes up to 0.52 ml/g have proved easily achievable at the 10 g batch level. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3548513] All rights reserved.
Original language | English |
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Pages (from-to) | K25-K27 |
Journal | Electrochemical and Solid-State Letters |
Volume | 14 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1 Jan 2011 |
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Dive into the research topics of 'Extremely High Surface Area Metallurgical-Grade Porous Silicon Powder Prepared by Metal-Assisted Etching'. Together they form a unique fingerprint.Projects
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Towards an Atomic-scale understanding of the 3D Structures of size-selected Clusters on Surfaces
Li, Z., Johnston, R. & Palmer, R.
Engineering & Physical Science Research Council
1/02/10 → 17/01/14
Project: Research Councils