Extremely High Surface Area Metallurgical-Grade Porous Silicon Powder Prepared by Metal-Assisted Etching

A Loni, D Barwick, L Batchelor, J Tunbridge, Yisong Han, Zi Li, LT Canham

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

Metallurgical-grade silicon powder (10 m(2)/g surface area) has been porosified using a metal-assisted chemical etch process based on hydrofluoric acid-ferric chloride chemistry. By controlling the reagent concentrations and ratios, the degree of porosification has been varied. Initiating the reaction at temperatures below 0 degrees C, typically between -15 degrees C and -25 degrees C, yields etched powders with spectacularly increased surface area and pore volume (porosity). The reduced temperature, and its subsequent control, favors pore nucleation and propagation while minimizing bulk chemical etching. Using this process, mesoporous powders with surface areas up to 480 m(2)/g and pore volumes up to 0.52 ml/g have proved easily achievable at the 10 g batch level. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3548513] All rights reserved.
Original languageEnglish
Pages (from-to)K25-K27
JournalElectrochemical and Solid-State Letters
Volume14
Issue number5
DOIs
Publication statusPublished - 1 Jan 2011

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