Enhanced discharge energy density of rGO/PVDF nanocomposites: The role of the heterointerface

Ye Zhang, Yaqiong Wang, Shaojun Qi, Steven Dunn, Hanshan Dong, Timothy Button

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Recent reports of conductive-filler/polymer composites with large dielectric permittivity (K) make them potential candidates for flexible capacitors. Hence, an interesting question is how these high K composites behave under a strong electric field strength. In this letter, we use in-situ-reduced graphite oxide (rGO)/poly(vinylidene fluoride) (PVDF) nanocomposites as an example to study the energy storage behaviour of high K materials. We show the dielectric behaviour contrasts between weak and strong fields. High K materials inevitably become more lossy with increasing field strength. Simultaneously, we reveal that the in-situ reduction temperature can affect the energy storage performance. Improved energy storage performance is achieved for a nanocomposite reduced at a moderate temperature. When reduced at 160 C, a device with an rGO volume fraction of 1.5 vol. % displayed a discharge energy density of 0.67 J/cm3 at 50 MV/m. This was 2.9 times greater than pure PVDF. We develop a model to explain this behaviour that proposes a reduced electrical contrast of the rGO/PVDF heterointerface minimising the recombination of localized charge carriers. Our results indicate, simultaneously, the potential and limitation of high K nanocomposites and shed light on the optimisation of the design and fabrication of high discharge energy density flexible capacitors for microelectronic devices.
Original languageEnglish
Article number202904
JournalApplied Physics Letters
Publication statusPublished - 16 May 2018


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