Encapsulation of Au nanoparticles on a silicon wafer during thermal oxidation

M. Bowker*, J. J. Crouch, A. F. Carley, P. R. Davies, D. J. Morgan, G. Lalev, S. Dimov, D. T. Pham

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)
17 Downloads (Pure)

Abstract

We report the behavior of Au nanoparticles anchored onto a Si(111) substrate and the evolution of the combined structure with annealing and oxidation. Au nanoparticles, formed by annealing a Au film, appear to "float" upon a growing layer of SiO2 during oxidation at high temperature, yet they also tend to become partially encapsulated by the growing silica layers. It is proposed that this occurs largely because of the differential growth rates of the silica layer on the silicon substrate between the particles and below the particles due to limited access of oxygen to the latter. This in turn is due to a combination of blockage of oxygen adsorption by the Au and limited oxygen diffusion under the gold. We think that such behavior is likely to be seen for other metal-semiconductor systems.

Original languageEnglish
Pages (from-to)21577-21582
Number of pages6
JournalJournal of Physical Chemistry C
Volume117
Issue number41
Early online date20 Sept 2013
DOIs
Publication statusPublished - 17 Oct 2013

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • General Energy

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