Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air

George Adamopoulos; Aneeqa Bashir; Paul H. Wöbkenberg; Donal D.C. Bradley; Thomas D. Anthopoulos

doi:10.1063/1.3238466

Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air

George Adamopoulos^*
, Aneeqa Bashir
, Paul H. Wöbkenberg
, Donal D.C. Bradley
, Thomas D. Anthopoulos

^*Corresponding author for this work

Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n -channel characteristics with electron mobility in the range 10-22 cm²/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed.

Original language	English
Article number	133507
Journal	Applied Physics Letters
Volume	95
Issue number	13
DOIs	https://doi.org/10.1063/1.3238466
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3238466

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title = "Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air",

abstract = "We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n -channel characteristics with electron mobility in the range 10-22 cm2/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed.",

author = "George Adamopoulos and Aneeqa Bashir and W{\"o}bkenberg, \{Paul H.\} and Bradley, \{Donal D.C.\} and Anthopoulos, \{Thomas D.\}",

year = "2009",

doi = "10.1063/1.3238466",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

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AU - Adamopoulos, George

AU - Bashir, Aneeqa

AU - Wöbkenberg, Paul H.

AU - Bradley, Donal D.C.

AU - Anthopoulos, Thomas D.

PY - 2009

Y1 - 2009

N2 - We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n -channel characteristics with electron mobility in the range 10-22 cm2/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed.

AB - We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n -channel characteristics with electron mobility in the range 10-22 cm2/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 133507

ER -

Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air

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